SM1A12DSK Datasheet PDF - Sinopower

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SM1A12DSK
Sinopower

Part Number SM1A12DSK
Description Dual N-Channel Enhancement Mode MOSFET
Page 11 Pages


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SM1A12DSK
®
Dual N-Channel Enhancement Mode MOSFET
Features
· 100V/3.5A,
RDS(ON)= 101mW(max.) @ VGS= 10V
RDS(ON)= 114mW(max.) @ VGS= 4.5V
· ESD proteced
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in DC/DC Converter.
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP-8
D1 D1
D2 D2
G1 G2
Ordering and Marking Information
S1 S2
N-Channel MOSFET
SM1A12DS
Assembly Material
Handling Code
Temperature Range
Package Code
SM1A12DS K :
SM1A12
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
1
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SM1A12DSK
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
VD S S
VGSS
ID a
ID
a
M
ISa
EASb
TJ
TSTG
PD a
RqJ
a,c
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=10V)
300ms Pulsed Drain Current (VGS=10V)
Diode Continuous Forward Current
TA=25°C
TA=70°C
Avalanche Energy, Single Pulsed (L=0.3mH)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
100
±20
3.5
2.8
14
3
30
150
-55 to 150
2.5
1.6
50
V
A
mJ
°C
W
°C/W
Notes aSurfac e Mounted on 1in2 pad area, t £ 10sec.
Notes bUIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature Tj=25°C).
Notes cMaximum under Steady State conditions is 75 °C/W.
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
VGS=0V, IDS=250mA
VDS=80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±16V, VDS=0V
VGS=10V, IDS=3.5A
VGS=4.5V, IDS=2A
ISD=3A, VGS=0V
ISD=3.5A, dlSD/dt=100A/ms
SM1A12DSK
Min. Typ. Max.
100 -
-
- -1
- - 30
1.5 2 2.5
- - ±10
- 78 101
- 88 114
0.6 0.8 1.1
- 36 -
- 50 -
Unit
V
mA
V
mA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
2
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SM1A12DSK
®
Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=50V, VGS=10V,
IDS=3.5A
Note a : Pulse test ; pulse width £ 300 ms, duty cycle £ 2%.
Note b : Guaranteed by design, not subject to production testing.
SM1A12DSK
Unit
Min. Typ. Max.
- 900 -
- 60 - pF
- 40 -
- 8 15
- 6 11
- 40 75 ns
- 24 45
- 20 -
- 3 - nC
- 3.1 -
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
3
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SM1A12DSK
®
Typical Operating Characteristics
Power Dissipation
3.0
2.5
2.0
1.5
1.0
0.5
TA=25oC
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 TA=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
50
10
300ms
1 1ms
10ms
0.1 100ms
1s
DC
0.01 TA=25OC
0.01 0.1 1 10 100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4 1E-3 0.01
Mounted on 1in2 pad
RqJA : 50 oC/W
0.1 1 10 30
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
4
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