SM1A00NSF Datasheet PDF - Sinopower

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SM1A00NSF
Sinopower

Part Number SM1A00NSF
Description N-Channel Enhancement Mode MOSFET
Page 10 Pages


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SM1A00NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 100V/180Aa,
RDS(ON)= 4.2mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Synchronous Rectification.
· Power Management in Inverter Systems.
· Motor Driver.
· Uninterruptible Power Supply.
Pin Description
GDS
Top View of TO-220
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1A00NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1A00NS F : SM1A00NS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
1
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SM1A00NSF
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
100
V
±25
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
80
ID Continuous Drain Current
TC=25°C
TC=100°C
180 a
115
A
IDM b Pulsed Drain Current
TC=25°C
400
PD Maximum Power Dissipation
TC=25°C
TC=100°C
312
W
125
RqJC Thermal Resistance-Junction to Case
Steady State
0.4 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
14.5
A
11.5
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
W
1.25
RqJA Thermal Resistance-Junction to Ambient
IAS c Avalanche Current, Single pulse
Steady State
L=0.5mH
62.5 °C/W
57 A
EAS c Avalanche Energy, Single pulse
L=0.5mH
812 mJ
Note aCalculated continuous current based on maximum allowable junction temperature. Bonding wire limitation
current is 120A.
Note bPulse width limited by max. junction temperature.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
2
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SM1A00NSF
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250mA
VDS=80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
ISD=20A, VGS=0V
ISD=40A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS =30V,
Fr equenc y=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=50V, VGS=10V,
IDS=40A
Note dPulse test ; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
Min.
100
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
-1
- 30 mA
3 4V
- ±100 nA
3.5 4.2 mW
0.8 1.3 V
56 - ns
136 - nC
1-
9550 12400
980 -
595 -
47 85
33 60
160 290
100 180
W
pF
ns
215 300
61 - nC
62 -
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
3
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SM1A00NSF
Typical Operating Characteristics
®
Power Dissipation
350
300
250
200
150
100
50
0 TC=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
140
120
100
80
60
40
20
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature
Safe Operation Area
800
100ms
100
1ms
10
10ms
1
DC
0.1 TC=25oC
0.01 0.1 1 10 100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.01
0.02
0.01
1E-3
Single Pulse
1E-4
1E-6 1E-5 1E-4
1E-3
RqJC :0.4oC/W
0.01 0.1 0.5
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
4
www.sinopowersemi.com



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