SM1202NSAS Datasheet PDF - Sinopower

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SM1202NSAS
Sinopower

Part Number SM1202NSAS
Description N-Channel Enhancement Mode MOSFET
Page 11 Pages


SM1202NSAS datasheet pdf
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SM1202NSAS
Features
· 30V/0.83A ,
RDS(ON)=0.7W(max.) @ VGS=4.5V
RDS(ON)=1W(max.) @ VGS=2.5V
RDS(ON)=1.6W(max.) @ VGS=1.8V
RDS(ON)=2W(max.) @ VGS=1.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· ESD Protection
Applications
· High Speed Switching.
· Analog Switch.
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-723
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1202NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
AS : SOT-723
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM1202NS AS :
02
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
1
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SM1202NSAS
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Common Ratings
VD SS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
RqJA b Thermal Resistance-Junction to Ambient
Note aPulse width limited by max. junction temperature.
Note bSurface Mounted on min. pad area.
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
Steady State
Rating
30
±12
150
-55 to 150
250
350
285
1
150
96
833
Unit
V
°C
mA
mA
A
mW
°C/W
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
2
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SM1202NSAS
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD c Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics c
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
TJ =85° C
VDS=VGS, IDS=250mA
VGS=±12V, VDS=0V
VGS=4.5V, IDS=100mA
VGS=2.5V, IDS=50mA
VGS=1.8V, IDS=20mA
VGS=1.5V, IDS=10mA
ISD=250mA, VGS=0V
ISD=1A, dlSD/dt=100A/ms
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,
VDS =15V,
Fr equenc y=1.0MHz
VDD=15V, RL=30W,
IDS=0.33A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=1A
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
Min.
30
-
-
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
-1
- 30 mA
0.95 1.3 V
- ±10 mA
0.55 0.7 W
0.7 1 W
1.1 1.6 W
1.4 2 W
0.8 1.3 V
8.2 - ns
2.5 - nC
28 37
8-
3-
1.4 2.6
9.9 17.9
10.6 19.2
2.3 4.2
pF
ns
0.74 1.04
0.44 -
0.1 -
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
3
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SM1202NSAS
®
Typical Operating Characteristics
Power Dissipation
180
150
120
90
60
30
0 TA=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
400
350
300
250
200
150
100
50
TA=25oC,VG=4.5V
0
0 20 40 60 80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
3
1
0.1
0.01
300ms
1ms
10ms
100ms
1s
DC
T =25OC
1E-3 A
0.1
1
10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.05
1E-4 1E-3 0.01 0.1
Mounted on min pad
RqJA : 833 oC/W
1 10 100 1000
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2014
4
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SM1202NSAS N-Channel Enhancement Mode MOSFET SM1202NSAS
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