SI7818DN Datasheet PDF - Vishay Siliconix


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SI7818DN
Vishay Siliconix

Part Number SI7818DN
Description N-Channel 150-V (D-S) MOSFET
Page 12 Pages

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N-Channel 150-V (D-S) MOSFET
Si7818DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
150 0.135 at VGS = 10 V
0.142 at VGS = 6 V
ID (A)
3.4
3.3
Qg (Typ.)
20 nC
PowerPAK® 1212-8
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• PWM-Optimized TrenchFET® Power MOSFET
• 100 % Rg Tested
• Avalanche Tested
APPLICATIONS
• Primary Side Switching Circuits
3.30 mm
S
1S
3.30 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7818DN-T1-E3 (Lead (Pb)-free)
Si7818DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
3.4 2.2
2.7 1.7
Pulsed Drain Current
IDM 10
Continuous Source Current (Diode Conduction)a
IS 3.2 1.3
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
IAS
EAS
9
4
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.8
2.0
1.5
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t 10 s
Steady State
RthJA
26
65
33
81 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solderinterconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73252
S-83050-Rev. D, 29-Dec-08
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Si7818DN
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 150 V, VGS = 0 V
VDS = 150 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.4 A
VGS = 6 V, ID = 3.3 A
Forward Transconductancea
gfs VDS = 15 V, ID = 3.4 A
Diode Forward Voltagea
VSD IS = 3.2 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 75 V, VGS = 10 V, ID = 3.4 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 100 V, RL = 100 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3.2 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
2
10
Typ.
Max.
4
± 100
1
5
0.112
0.117
17
0.78
0.135
0.142
1.2
Unit
V
nA
µA
A
Ω
S
V
20 30
2.7 nC
4.7
0.8 1.7 2.6
Ω
10 15
10 15
25 40 ns
15 25
50 75
100 150 nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS = 10 thru 4 V
8
10
8
66
4
2 3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
TC = 125 °C
2
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 73252
S-83050-Rev. D, 29-Dec-08
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Si7818DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.14 1200
0.13
0.12
0.11
0.10
0.09
VGS = 6 V
VGS = 10 V
1000
800
600
400
200
Coss
Ciss
Crss
0.08
0
2468
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 75 V
8 ID = 3.4 A
10
0
0 10 20 30 40 50 60 70 80
VDS - Drain-to-Source Voltage (V)
Capacitance
2.4
VGS = 10 V
2.0 ID = 3.4 A
6 1.6
4 1.2
2 0.8
0
0 3 6 9 12 15 18 21
Qg - Total Gate Charge (nC)
Gate Charge
10
TJ = 150 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.30
0.25
0.20
ID = 3.4 A
0.15
0.10
0.05
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73252
S-83050-Rev. D, 29-Dec-08
www.vishay.com
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Si7818DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 50
0.2 ID = 250 µA
0.0
40
- 0.2
- 0.4
- 0.6
30
20
- 0.8
- 1.0
- 1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
0
0.01
0.1
1 10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
1000
Limited by RDS(on)*
10
IDM Limited
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1
0.1
0.01
ID(on)
Limited
TA = 25 °C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.001
0.1
BVDSS Limited
1 10 100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73252
S-83050-Rev. D, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




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