SI7810DN Datasheet PDF - Vishay Siliconix


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SI7810DN
Vishay Siliconix

Part Number SI7810DN
Description N-Channel 100-V (D-S) MOSFET
Page 4 Pages

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Si7810DN
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.062 @ VGS = 10 V
0.084 @ VGS = 6 V
ID (A)
5.4
4.6
PowerPAKt 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PowerPAKt 1212-8 Package with Low
1.07-mm Profile
D PWM Optimized
APPLICATIONS
D Primary Side Switch
D In-Rush Current Limiter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
100
"20
5.4 3.4
4.3 2.8
20
3.2 1.3
19
18
3.8 1.5
2.0 0.8
–55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70689
S-04559—Rev. A, 27-Aug-01
Symbol
RthJA
RthJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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Si7810DN
Vishay Siliconix
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MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 5.4 A
VGS = 6 V, ID = 4.6 A
VDS = 15 V, ID = 5.4 A
IS = 3.2 A, VGS = 0 V
2
20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 10 V, ID = 5.4 A
VDD = 50 V, RL = 50 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 3.2 A, di/dt = 100 A/ms
Typ Max Unit
"100
1
5
0.052
0.070
12
0.78
0.062
0.084
1.2
V
nA
mA
A
W
S
V
13.5
17
3 nC
4.6
10 15
15 25
20 30 ns
15 25
45 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 10 thru 7 V
6V
16
Transfer Characteristics
20
16
12 12
8
5V
4
4V
0
012345
VDS Drain-to-Source Voltage (V)
8
TC = 125_C
4
25_C
55_C
0
01234567
VGS Gate-to-Source Voltage (V)
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Document Number: 70689
S-04559Rev. A, 27-Aug-01
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Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1000
Capacitance
0.16
0.12
0.08
0.04
VGS = 6 V
VGS = 10 V
0.00
0
4 8 12 16
ID Drain Current (A)
Gate Charge
10
VDS = 50 V
8 ID = 5.4 A
20
6
4
2
0
0 2 4 6 8 10 12 14
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
800 Ciss
600
400
Coss
200
Crss
0
0 20 40 60
VDS Drain-to-Source Voltage (V)
80
On-Resistance vs. Junction Temperature
2.2
2.0 VGS = 10 V
ID = 5.4 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.16
0.12
0.08
ID = 5.4 A
TJ = 25_C
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD Source-to-Drain Voltage (V)
Document Number: 70689
S-04559Rev. A, 27-Aug-01
0.00
0
2468
VGS Gate-to-Source Voltage (V)
10
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Si7810DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4 ID = 250 mA
0.2
Single Pulse Power, Juncion-To-Ambient
50
40
0.0
0.2
30
0.4
0.6
20
0.8
1.0
10
1.2
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
0.01
0.1
1 10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
2
1
Duty Cycle = 0.5
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1 Single Pulse
0.05
0.02
0.01
104
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103
102
Square Wave Pulse Duration (sec)
101
1
Document Number: 70689
S-04559Rev. A, 27-Aug-01
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