SI7794DP Datasheet PDF - Vishay Siliconix


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SI7794DP
Vishay Siliconix

Part Number SI7794DP
Description N-Channel 30 V (D-S) MOSFET
Page 13 Pages

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Si7794DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0034 at VGS = 10 V
30
0.0042 at VGS = 4.5 V
ID (A)a
60
60
Qg (Typ.)
23 nC
PowerPAK® SO-8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET™ Monolithic TrenchFET® Gen III
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7794DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Low Side in Vcore, System and Memory
- Notebook PCs
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L =0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
60a
60a
28.6b, c
22.8b, c
80
60a
5.6b, c
40
80
48
31
5.0b, c
3.2b, c
- 55 to 150
260
Schottky
Diode
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
2.1
25
°C/W
2.6
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 67692
www.vishay.com
S11-1150-Rev. A, 13-Jun-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7794DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 3 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
30
V
1 2.5
± 100
nA
0.035
3
0.2
30
mA
30 A
0.0027 0.0034
0.0033 0.0042
85 S
2520
630
220
48 72
23 35
6.4
7.2
0.3 1.1 2.2
22 40
16 30
30 55
10 20
11 22
10 20
30 55
10 20
0.39
28
17
14
14
60
80
0.5
55
34
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67692
2 S11-1150-Rev. A, 13-Jun-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80 10
VGS = 10 V thru 3 V
64
8
Si7794DP
Vishay Siliconix
48 6
TC = 25 °C
32 4
16
0
0.0
0.0040
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
2.5
Output Characteristics
0.0036
0.0032
VGS = 4.5 V
2
TC = 125 °C
0
0 0.8 1.6
TC = - 55 °C
2.4 3.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
3200
2560
Ciss
1920
0.0028
0.0024
VGS = 10 V
0.0020
0
16 32 48 64 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
6
VDS = 10 V
VDS = 20 V
4
VDS = 15 V
2
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
1280
640
Coss
Crss
0
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67692
www.vishay.com
S11-1150-Rev. A, 13-Jun-11
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



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New Product
Si7794DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.015
10
TJ = 150 °C
1
TJ = 25 °C
0.012
0.009
ID = 20 A
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
10-1
0.006
0.003
TJ = 125 °C
TJ = 25 °C
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
200
10-2
10-3
10-4
10-5
30 V
20 V
10 V
160
120
80
40
10-6
0
25 50 75 100 125
TJ - Temperature (°C)
Reverse Current (Schottky)
150
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100 IDM Limited
ID Limited
10 1 ms
1 Limited by RDS(on)*
10 ms
100 ms
1s
0.1
TC = 25 °C
Single Pulse
10 s
DC
0.01
0.01
0.1
BVDSS Limited
1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 67692
4 S11-1150-Rev. A, 13-Jun-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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