SI7792DP Datasheet PDF - Vishay Siliconix


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SI7792DP
Vishay Siliconix

Part Number SI7792DP
Description N-Channel 30 V (D-S) MOSFET
Page 13 Pages

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Si7792DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0021 at VGS = 10 V
30
0.0026 at VGS = 4.5 V
ID (A)a
60
60
Qg (Typ.)
41 nC
PowerPAK® SO-8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET™ Monolithic TrenchFET® Gen III
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7792DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Low Side in Vcore, System and Memory
- Notebook PCs
D
G
N-Channel MOSFET
S
Schottky
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L =0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
60a
60a
40.6b, c
32.5b, c
100
60a
5.6b, c
50
125
104
66.6
6.25b, c
4.0b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
15
0.9
20
°C/W
1.2
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
Document Number: 67641
www.vishay.com
S11-0856-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7792DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 3 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
30
V
1 2.5
± 100
nA
0.06 0.3
5 50
mA
30 A
0.0017 0.0021
0.0021 0.0026
83 S
4735
1020
395
90 135
41 62
11.8
12.6
0.2 0.9 1.8
38 70
74 130
50 90
14 28
15 30
13 26
40 70
12 24
0.35
36
27
18
18
60
100
0.5
60
45
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67641
2 S11-0856-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
VGS = 10 V thru 3 V
64
10
8
Si7792DP
Vishay Siliconix
48 6
TC = 25 °C
32 4
16
0
0.0
0.0025
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.0023
2
TC = 125 °C
0
0 0.8
1.6
TC = - 55 °C
2.4 3.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
6000
4800
Ciss
0.0021
VGS = 4.5 V
3600
0.0019
0.0017
VGS = 10 V
2400
1200
Crss
Coss
0.0015
0
16 32 48 64 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
VDS = 20 V
6
VDS = 10 V
VDS = 15 V
4
2
0
0 6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.6
30
1.4
VGS = 10 V
1.2
VGS = 4.5 V
1.0
0.8
0
0 19 38 57 76 95
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67641
www.vishay.com
S11-0856-Rev. A, 02-May-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



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New Product
Si7792DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.010
10
TJ = 150 °C
1
0.008
0.006
ID = 20 A
TJ = 25 °C
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
0.004
0.002
TJ = 125 °C
TJ = 25 °C
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
10-2
10-3
10-4
10-5
30 V
20 V
10 V
80
60
40
20
10-6
0
25 50 75 100 125
TJ - Temperature (°C)
Reverse Current (Schottky)
150
0
0.01 0.1 1 10
Time (s)
Single Pulse Power, Junction-to-Ambient
1000
IDM Limited
100
ID Limited
1 ms
10
10 ms
Limited by RDS(on)*
1
0.1 TC = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
100 ms
1s
10 s
DC
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 67641
4 S11-0856-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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