SI7774DP Datasheet PDF - Vishay Siliconix


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SI7774DP
Vishay Siliconix

Part Number SI7774DP
Description N-Channel 30 V (D-S) MOSFET
Page 13 Pages

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Si7774DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30 0.0038 at VGS = 10 V
0.0047 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a
60
60
Qg (Typ.)
21.5 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET®
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• VRM, POL, Server
• Notebook
- Low-Side
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L =0.1 mH
VDS
VGS
ID
IDM
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
± 20
60a
60a
27b, c
21b, c
80
60a
8b, c
40
80
48
31
5.0b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
2.1
25
°C/W
2.6
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 70630
S10-1534-Rev. A, 19-Jul-10
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
TC = 25 °C
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
30
V
1.0 2.2
± 100
nA
0.040
3.5
0.3
50
mA
30 A
0.0031 0.0038
0.0038 0.0047
70 S
2630
630 pF
210
44 66
21.5 32.5
5.8
nC
6.1
0.4 2.1 4.2
11 22
9 18
30 60
9 18
ns
21 42
11 22
29 59
8 16
0.45
22
11
10
12
60
80
0.6
44
22
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70630
S10-1534-Rev. A, 19-Jul-10
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80 10
VGS = 10 V thru 4 V
64
8
48 VGS = 3 V
6
Si7774DP
Vishay Siliconix
32
16
0
0.0
0.0045
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.0041
0.0037
VGS = 4.5 V
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3500
2800
Ciss
2100
5
0.0033
0.0029
VGS = 10 V
0.0025
0
16 32 48 64 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
VDS = 10 V
6
VDS = 15 V
VDS = 20 V
4
2
0
0 10 20 30 40
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70630
S10-1534-Rev. A, 19-Jul-10
50
1400
Coss
700
Crss
0
0
5
10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
1.4
VGS = 10 V
20
1.2 VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.020
10
TJ = 150 °C
1
0.016
0.012
ID = 10 A
TJ = 25 °C
0.1
0.008
TJ = 125 °C
0.01
0.001
0
0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
10-1
0.004
TJ = 25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
10-2
10-3
10-4
10-5
10-6
30 V
10 V
20 V
160
120
80
40
10-7
0
25 50 75 100 125
TJ - Junction Temperature (°C)
Reverse Current (Schottky)
150
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10 1 ms
10 ms
1 100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
BVDSS Limited
DC
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 70630
S10-1534-Rev. A, 19-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/




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