SI7772DP Datasheet PDF - Vishay Siliconix


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SI7772DP
Vishay Siliconix

Part Number SI7772DP
Description N-Channel 30-V (D-S) MOSFET
Page 13 Pages

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Si7772DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.013 at VGS = 10 V
30
0.0165 at VGS = 4.5 V
ID (A)
35.6a
31.6
Qg (Typ.)
8.3 nC
PowerPAK® SO-8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET® Gen III
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
APPLICATIONS
• Notebook System Power
- Low Side
D
G
Bottom View
Ordering Information: Si7772DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
35.6a
28.5
12.9b, c
10.3b, c
50
27
3.5b, c
15
11.25
29.8
19
3.9b, c
2.5b, c
- 55 to 150
260
Schottky Diode
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
27
3.5
32
°C/W
4.2
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 1 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
30
1.2 2.5
± 100
0.028
0.2
2 20
30
0.0105 0.013
0.013 0.0165
37
1084
200
77
18.5 28
8.3 12.5
2.8
2
0.3 1.3 2.6
16 30
18 35
15 30
10 20
8 16
11 22
17 34
9 18
27
50
0.48 0.65
17 34
7 14
10
7
Unit
V
nA
mA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 10
VGS = 10 V thru 4 V
40
8
Si7772DP
Vishay Siliconix
30 6
20
VGS = 3 V
10
0
0.0
0.0165
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
4
2
0
0
1500
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.0150
0.0135
VGS = 4.5 V
1200
900
Ciss
0.0120
0.0105
VGS = 10 V
0.0090
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
VDS = 10 V
6
VDS = 20 V
4 VDS = 15 V
2
0
0 4 8 12 16
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
20
600
300 Coss
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 15 A
1.6
30
1.4 VGS = 10 V
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
TJ = 150 °C
1
TJ = 25 °C
0.05
0.04
ID = 15 A
0.03
0.1 0.02
TJ = 125 °C
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
0.01
TJ = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
10-2
10-3
10-4
30 V
10 V
10-5
20 V
10-6
64
48
32
16
10-7
0
25 50 75 100 125
TJ - Junction Temperature (°C)
Reverse Current (Schottky)
100
150
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by RDS(on)*
10
1 ms
1 10 ms
100 ms
1s
0.1 10 s
TA = 25 °C
Single Pulse
BVDSS Limited
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/




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