SI7748DP Datasheet PDF - Vishay Siliconix


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SI7748DP
Vishay Siliconix

Part Number SI7748DP
Description N-Channel 30-V (D-S) MOSFET
Page 13 Pages

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Si7748DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.0048 at VGS = 10 V
0.0066 at VGS = 4.5 V
ID (A)a
50
50
Qg (Typ.)
27.8 nC
PowerPAK® SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7748DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free
• SkyFET™ Monolithic TrenchFET®
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Notebook
- Vcore Low-Side
D
RoHS
COMPLIANT
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
50a
50a
23.5b, c
18.6b, c
80
50a
4.3b, c
30
45
56
31
4.8b, c
3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
21
1.7
26
°C/W
2.2
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 68 °C/W.
Document Number: 68785
S-81714-Rev. A, 04-Aug-08
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Si7748DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
TC = 25 °C
IS = 2 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
30
1.3 2.7
± 100
0.075 0.30
6.7 65
40
0.0039 0.0048
0.0053 0.0066
80
3770
575
215
61 92
27.8 42
10.2
7.3
0.2 1.0 2.0
15 30
9 18
35 70
8 16
36 75
16 30
44 85
16 30
0.42
25
13
12
13
50
80
0.55
50
26
Unit
V
nA
mA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 68785
S-81714-Rev. A, 04-Aug-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80 10
VGS = 10 thru 4 V
64
8
Si7748DP
Vishay Siliconix
48
32
VGS = 3 V
16
0
0.0
0.008
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.007
6
TC = 25 °C
4
2
0
0
4500
3600
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
5
0.006
0.005
0.004
VGS = 4.5 V
VGS = 10 V
0.003
0
14 28 42 56 70
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
6
4
2
VDS = 10 V
VDS = 15 V
VDS = 20 V
2700
1800
Coss
900
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.5
VGS = 10 V
30
1.2 VGS = 4.5 V
0.9
0.6
0
0.0 12.4 24.8 37.2 49.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68785
S-81714-Rev. A, 04-Aug-08
62.0
0.3
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7748DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.025
10
TJ = 150 °C
1
TJ = 25 °C
0.020
0.015
ID = 15 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
10-1
0.010
0.005
TJ = 125 °C
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
10-2
30 V
10-3
20 V
10-4
10 V
10-5
160
120
80
40
10-6
0
25 50 75 100 125
TJ - Junction Temperature (°C)
Reverse Current (Schottky)
150
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
1 ms
10
10 ms
1 100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 68785
S-81714-Rev. A, 04-Aug-08
Datasheet pdf - http://www.DataSheet4U.net/




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