SI7738DP Datasheet PDF - Vishay Siliconix


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SI7738DP
Vishay Siliconix

Part Number SI7738DP
Description Dual N-Channel 150-V (D-S) MOSFET
Page 13 Pages

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Si7738DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
150 0.038 at VGS = 10 V
ID (A)a
30
Qg (Typ.)
35 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
PowerPAK® SO-8
6.15 mm
S
1S
5.15 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7738DP-T1-E3 (Lead (Pb)-free)
Si7738DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
VDS
VGS
ID
IDM
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
PD
TJ, Tstg
Limit
150
± 20
30a
26
7.7b, c
6.2b, c
60
30a
4.5b, c
30
45
96
62
5.4b, c
3.5b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
18
1
23 °C/W
1.3
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
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Si7738DP
Vishay Siliconix
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
IDSS
ID(on)
RDS(on)
gfs
VDS = 150 V, VGS = 0 V
VDS = 150 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 7.7 A
VDS = 15 V, ID = 7.7 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 75 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 75 V, VGS = 10 V, ID = 7.7 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 75 V, RL = 12 Ω
ID 6.2 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 6.2 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
150
2
30
Typ. Max. Unit
200
- 10
0.031
22
V
mV/°C
4
± 100
1
10
0.038
V
nA
µA
A
Ω
S
2100
160
45
35
8
9
1.6
15
10
25
10
53
25
15
40
15
pF
nC
Ω
ns
30
30
0.8 1.2
75 115
245 370
58
17
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 10
VGS = 10 V thru 6 V
48
8
Si7738DP
Vishay Siliconix
36
24
12
0
0
0.040
0.036
0.032
VGS = 5 V
VGS = 4 V
1 2 34
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
VGS = 10 V
6
4
2
0
0
2500
2000
TC = 125 °C
TC = 25 °C
TC = - 55 °C
1234567
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
1500
0.028
1000
0.024
0.020
0
5 10 15 20 25 30
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 7.7 A
8
VDS = 75 V
6
VDS = 120 V
4
500
0
0
Crss
Coss
20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
2.4
ID = 7.7 A
2.0
VGS = 10 V
1.6
100
1.2
2 0.8
0
0 5 10 15 20 25 30 35
Qg - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
www.vishay.com
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Si7738DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 150
120
TJ = 150 °C
10
90
60
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4.2
3.8
3.4
3.0
2.6
ID = 250 µA
2.2
1.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.10
0.08
ID = 7.7 A
0.06
TJ = 125 °C
0.04
0.02
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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4
30
0
0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
125 °C
10
25 °C
1
10-4
10-3
10-2
10-1
1
tav (s)
Single Pulse Avalanche Current Capability vs. Time
100
Limited by RDS(on)*
10
100 µs
1 ms
1 10 ms
100 ms
0.1 1 s
10 s
0.01
DC
TA = 25 °C
Single Pulse
0.001
0.1
1
10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
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