SI7309DN Datasheet PDF - Vishay Siliconix


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SI7309DN
Vishay Siliconix

Part Number SI7309DN
Description P-Channel 60-V (D-S) MOSFET
Page 7 Pages

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P-Channel 60-V (D-S) MOSFET
Si7309DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) (Ω)
0.115 at VGS = - 10 V
0.146 at VGS = - 4.5 V
ID (A)a
-8
-8
Qg (Typ.)
14.5 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package
with Small Size and Low 1.07 mm Profile
PowerPAK 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free)
Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• CCFL inverter
• Class D-amp
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (10 µs Width)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 60
± 20
- 8a
- 7.8
- 3.9b, c
- 3.1b, c
- 20
- 8a
- 2.7b, c
- 15
11
19.8
12.7
3.2b, c
2.1b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Case (Drain)
Steady State
RthJA
RthJC
31
5
39
°C/W
6.3
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
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Si7309DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3.9 A
VGS = - 4.5 V, ID = - 3.5 A
Forward Transconductancea
gfs VDS = - 15 V, ID = - 3.9 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 30 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 30 V, VGS = - 10 V, ID = - 3.9 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 30 V, VGS = - 4.5 V, ID = - 3.9 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 30 V, RL = 9.4 Ω
ID - 3.2 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 30 V, RL = 9.4 Ω
ID - 3.2 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 1.3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 1.3 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 60
-1
- 20
Typ.
Max.
Unit
- 50
+ 3.8
0.092
0.120
10
-3
± 100
-1
- 10
0.115
0.146
V
mV/°C
V
ns
µA
A
Ω
S
600
70
50
14.5
7.5
2.2
3.7
14
25
80
33
35
10
15
30
33
- 0.8
30
32
17
13
22
12
40
120
50
50
15
25
45
50
-8
- 20
- 1.2
50
50
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 73434
S-83051-Rev. B, 29-Dec-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 5
VGS = 10 thru 5 V
16 4
Si7309DN
Vishay Siliconix
12 4 V
8
4
0
0
0.30
3V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0.25
0.20
0.15
0.10
VGS = 4.5 V
VGS = 10 V
0.05
0.00
0 4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 3.9 A
8
6
VDS = 30 V
VDS = 48 V
4
2
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
15
3
2 TC = 125 °C
1 25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
Ciss
600
400
200
Coss
Crss
0
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V, 4.5 V
ID = 3.9 A
1.4
60
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7309DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
TJ = 150 °C
10
0.30
0.25
0.20
TJ = 25 °C
0.15
0.10
ID = 3.9 A
TA = 125 °C
TA = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
2.4
2.2
ID = 250 µA
2.0
0.05
2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
1.8 20
1.6
1.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
1
0.1
0.01
TA = 25 °C
Single Pulse
10
0
0.001 0.01 0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
10 ms
100 ms
1s
10 s
DC
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0.001
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




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