SI7308DN Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI7308DN
Vishay Siliconix

Part Number SI7308DN
Description N-Channel 60-V (D-S) MOSFET
Page 13 Pages

SI7308DN datasheet pdf
View PDF for PC
SI7308DN pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
N-Channel 60-V (D-S) MOSFET
Si7308DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.058 at VGS = 10 V
0.072 at VGS = 4.5 V
PowerPAK 1212-8
ID (A)a
6
6
Qg (Typ.)
13 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package
with Small Size and Low 1.07 mm Profile
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: Si7308DN-T1-E3 (Lead (Pb)-free)
Si7308DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• CCFL Inverter
• Class-D Amp
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (10 µs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IDM
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
60
± 20
6a
6a
5.4b, c
4.3b, c
20
6a
2.7b, c
11
6.1
19.8
12.7
3.2b, c
2.1b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Steady State
RthJA
RthJC
31
5
39
°C/W
6.3
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 73419
S-83051-Rev. B, 29-Dec-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7308DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5.4 A
VGS = 4.5 V, ID = 4.8 A
Forward Transconductancea
gfs VDS = 15 V, ID = 5.4 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 30 V, VGS = 10 V, ID = 5.4 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 30 V, VGS = 4.5 V, ID = 5.4 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 7 Ω
ID 4.3 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 7 Ω
ID 4.3 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 1.7 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
60
1
20
Typ.
Max.
Unit
55
-6
0.046
0.059
15
3
100
1
10
0.058
0.072
V
mV/°C
V
nA
µA
A
Ω
S
665
75 pF
40
13 20
69
nC
2.3
2.6
2Ω
15 25
65 100
15 25
10 15
ns
10 15
15 25
20 30
10 15
6
A
20
0.8 1.2
V
30 60 ns
32 50 nC
25
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73419
S-83051-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7308DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
18 VGS = 10 thru 4 V
16
14
12
10
8
6
4
2 3V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
3
2
TC = 125 °C
1 25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.080
0.075
0.070
0.065
0.060
VGS = 4.5 V
0.055
0.050
VGS = 10 V
0.045
0.040
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1000
800
Ciss
600
400
200
Coss
0 Crss
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
10
VDS = 30 V
8 ID = 5.4 A
6
4
2
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
15
2.0
1.8 VGS = 10 V, 4.5 V
ID = 5.4 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73419
S-83051-Rev. B, 29-Dec-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7308DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
TJ = 150 °C
10
0.12
0.11
0.10
0.09
0.08
ID = 5.4 A
TA = 125 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
0.07
0.06
0.05
TA = 25 °C
0.04
2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.0
2.8
2.6 ID = 250 µA
2.4
2.2
2.0
1.8
1.6
1.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited byRDS(on)*
10
50
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1
0.1
0.01
TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
www.vishay.com
4
0.001
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
100
Document Number: 73419
S-83051-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




SI7308DN datasheet pdf
Download PDF
SI7308DN pdf
View PDF for Mobile


Similiar Datasheets : SI7308DN

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact