SI7288DP Datasheet PDF - Vishay Siliconix


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SI7288DP
Vishay Siliconix

Part Number SI7288DP
Description Dual N-Channel 40-V (D-S) MOSFET
Page 13 Pages

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Si7288DP
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
0.019 at VGS = 10 V
0.022 at VGS = 4.5 V
ID (A)
20
19
Qg (Typ.)
4.9
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7288DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Backlight Inverter for LCD Displays
• DC/DC Converter
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
40
± 20
20
17
10a, b
8.2a, b
50
13
3.0a, b
10
5
15.6
10
3.6a, b
2.3a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typ.
29
6.5
Max.
35
8.0
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 80 °C/W.
Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
Forward Transconductanceb
gfs VDS = 10 V, ID = 10 A
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 20 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
VDS = 20 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 3 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. Typ. Max. Unit
40 V
47
- 5.2
mV/°C
1.2 2.8 V
100 nA
1
µA
10
20 A
0.0156 0.019
0.018 0.022
Ω
39 S
565
100
42
10 15
4.9 7.4
1.4
1.5
0.6 2.7 5.4
12 24
14 28
16 32
10 20
7 14
8 16
14 28
8 16
13
50
0.77 1.2
15 30
7.5 15
8
7
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 10
VGS = 10 V thru 4 V
40
8
Si7288DP
Vishay Siliconix
30
VGS = 3 V
20
10
0
0.0
0.025
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.022
0.019
VGS = 4.5 V
6
4
2
0
0
750
600
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
450
5
0.016
0.013
VGS = 10 V
0.010
0
10
8
6
4
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
ID = 10 A
VDS = 20 V
VDS = 10 V
VDS = 30 V
50
300
Coss
150
Crss
0
0
8
16 24 32
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 8 A
1.7
VGS = 10 V
40
1.4 VGS = 4.5 V
1.1
2 0.8
0
0.0 2.1 4.2 6.3 8.4 10.5
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.08
0.06
0.04
ID = 8 A
TJ = 125 °C
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.5
0.02
TJ = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
70
0.2 56
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
42
28
14
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power
10
10
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1
0.1 TA = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
Datasheet pdf - http://www.DataSheet4U.net/




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