SI7272DP Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI7272DP
Vishay Siliconix

Part Number SI7272DP
Description Dual N-Channel 30-V (D-S) MOSFET
Page 7 Pages

SI7272DP datasheet pdf
View PDF for PC
SI7272DP pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
New Product
Dual N-Channel 30-V (D-S) MOSFET
Si7272DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0093 at VGS = 10 V
0.0124 at VGS = 4.5 V
ID (A)a
25
25
Qg (Typ.)
8.2
PowerPAK SO-8
FEATURES
Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• PWM Optimized
APPLICATIONS
• System Power DC/DC
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7272DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 20
25a
25a
15b, c
12b, c
60
19
3.0b, c
22
14
3.6b, c
2.3b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typ.
26
4
Max.
35
5.5
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 69026
S09-0269-Rev. B, 16-Feb-09
www.vishay.com
1
Datashee



No Preview Available !

www.DataSheet.co.kr
Si7272DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VDS = 10 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 15 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
VDS = 15 V, VGS = 4.5 V, ID = 15 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. Typ. Max. Unit
30 V
28
- 5.6
mV/°C
1.2 2.5 V
100 nA
1
µA
10
30 A
0.0076 0.0093
0.0103 0.0124
Ω
45 S
1100
200
90
17
8.2
3.2
2.7
3.5
20
15
22
10
10
10
22
10
26
13
7
30
25
35
15
15
15
35
15
13
30
0.8 1.2
20 30
15 25
11
9
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69026
S09-0269-Rev. B, 16-Feb-09
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
New Product
Si7272DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 20
50
VGS = 10 V thru 4 V
40
30
20
VGS = 3 V
10
0
0.0
0.013
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
16
12
TC = 25 °C
8
4
TC = 125 °C
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.011
0.009
0.007
VGS = 4.5 V
VGS = 10 V
0.005
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 15 A
8
VDS = 15 V
6
4
VDS = 24 V
60
2
0
0 3 6 9 12 15 18
Qg - Total Gate Charge (nC)
Gate Charge
1200
900
Ciss
600
Coss
300
Crss
0
0
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 15 A
1.6
30
1.4
1.2
1.0
0.8
VGS = 4.5 V, 10 V
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69026
S09-0269-Rev. B, 16-Feb-09
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7272DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030
0.025
ID = 15 A
TJ = 150 °C
10
0.020
0.015
TJ = 125 °C
TJ = 25 °C
0.010
0.005
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.4
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
2.2
2.0
ID = 250 µA
1.8
32
24
1.6 16
1.4
8
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power
100
Limited by RDS(on)*
10
100 µs
1 ms
1 10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
10 s
1s
DC
0.01
0.1
BVDSS Limited
1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69026
S09-0269-Rev. B, 16-Feb-09
Datasheet pdf - http://www.DataSheet4U.net/




SI7272DP datasheet pdf
Download PDF
SI7272DP pdf
View PDF for Mobile


Similiar Datasheets : SI7272DP

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact