SI7270DP Datasheet PDF - Vishay Siliconix


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SI7270DP
Vishay Siliconix

Part Number SI7270DP
Description Dual N-Channel 30 V (D-S) MOSFET
Page 13 Pages

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Si7270DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.021 at VGS = 10 V
0.025 at VGS = 4.5 V
ID (A)f
8
8
Qg (Typ.)
6.6
PowerPAK® SO-8
6.15 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7270DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Fixed Telecom
- Server
• Synchronous Converter
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (300 µs)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
8f
8f
8 a, b, f
8a, b
35
8f
3.0a, b
15
11.2
17.8
11.4
3.6a, b
2.3a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typ.
28
5.5
Max.
35
7.0
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 80 °C/W.
f. Package limited.
Document Number: 66817
S10-2010-Rev. A, 06-Sep-10
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
RDS(on)
gfs
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 6 A
VDS = 10 V, ID = 8 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 3 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. Typ. Max. Unit
30 V
34
- 5.5
mV/°C
1.2 2.8 V
100 nA
1
µA
10
20 A
0.0175 0.021
0.0205 0.025
Ω
31 S
900
150 pF
60
14 21
6.6 10
nC
2.5
1.7
0.3 1.4 2.8 Ω
14 28
10 20
15 30
8 16
ns
10 20
8 16
18 36
8 16
8
A
35
0.77 1.2
V
13 26 ns
6.5 13 nC
8
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 66817
S10-2010-Rev. A, 06-Sep-10
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
10
40 8
Si7270DP
Vishay Siliconix
30
20
10
0
0
0.025
VGS = 3 V
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.023
0.021
VGS = 4.5 V
0.019
0.017
VGS = 10 V
0.015
0
8 16 24 32
ID - Drain Current (A)
On-Resistance vs. Drain Current
40
10
ID = 10 A
8
6
4
VDS = 10 V
VDS = 15 V
VDS = 20 V
2
0
0 3 6 9 12 15
Qg - Total Gate Charge (nC)
Gate Charge
6
TC = 25 °C
4
2
0
0
1100
880
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
5
660
440
220
Coss
Crss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 8 A
1.7
30
1.4
VGS = 10 V
1.1 VGS = 4.5 V
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66817
S10-2010-Rev. A, 06-Sep-10
www.vishay.com
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Si7270DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.10
10 0.08
ID = 8 A
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
0.2
0.0
- 0.2
- 0.4
- 0.6
ID = 250 μA
ID = 5 mA
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
70
56
42
28
14
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power
10
10
1 ms
1 10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
1s
10 s
DC
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66817
S10-2010-Rev. A, 06-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/




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