SI7236DP Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI7236DP
Vishay Siliconix

Part Number SI7236DP
Description Dual N-Channel 20-V (D-S) MOSFET
Page 13 Pages

SI7236DP datasheet pdf
View PDF for PC
SI7236DP pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Dual N-Channel 20-V (D-S) MOSFET
Si7236DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0052 at VGS = 4.5 V
20
0.007 at VGS = 2.5 V
ID (A)a
60
60
Qg (Typ.)
31 nC
PowerPAK SO-8
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
APPLICATIONS
• Synchronous Rectification
• DC-DC Point-of-Load
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7236DP-T1-E3 (Lead (Pb)-free)
Si7236DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 85 °C
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
± 12
60a
60a
20.7b, c
16.6b, c
80
38
2.9b, c
46
29
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
2.2
35 °C/W
2.7
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 85 °C/W.
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7236DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
RDS(on)
gfs
VGS = 4.5 V, ID = 20.7 A
VGS = 2.5 V, ID = 17.9 A
VDS = 10 V, ID = 20.7 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 20 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 10 V, RL = 1 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 1 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
20
0.6
20
Typ. Max. Unit
19
- 4.3
0.042
0.0056
120
1.5
± 100
1
10
0.0052
0.007
V
mV/°C
V
nA
µA
A
Ω
S
4000
650
300
68
31
7.5
5
3.5
30
100
80
22
10
15
60
10
105
47
45
150
120
35
15
25
90
15
pF
nC
Ω
ns
60
A
80
0.8 1.2
V
40 80 ns
30 60 nC
19
ns
21
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7236DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80 10
60
40
20
0
0.0
VGS = 5 V thru 2.5 V
2V
1.5 V
0.5 1.0 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
8
6
4
2
0
0.0
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
0.0065
0.0060
0.0055
0.0050
VGS = 2.5 V
4800
3600
2400
Ciss
0.0045
VGS = 4.5 V
0.0040
0
20 40 60 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1200
Coss
0 Crss
0
5 10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
20
10
ID = 20 A
8
6
4
VDS = 10 V
VDS = 16 V
1.6
ID = 20.7 A
1.4
1.2
1.0
4.5 V
2 0.8
0
0 20 40 60 80
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7236DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
TJ = 150 °C
TJ = 25 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.012
0.011
0.010
ID = 20.7 A
0.009
0.008
0.007
125 °C
0.006
0.005
25 °C
0.004
0.003
0.002
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.4 50
ID = 250 µA
1.2
40
1.0 30
0.8 20
0.6 10
0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by
RDS(on)*
10
100 µs
1 ms
10 ms
1
TA = 25 °C
Single Pulse
0.1
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09
Datasheet pdf - http://www.DataSheet4U.net/




SI7236DP datasheet pdf
Download PDF
SI7236DP pdf
View PDF for Mobile


Similiar Datasheets : SI7236DP

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact