SI7234DP Datasheet PDF - Vishay Siliconix


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SI7234DP
Vishay Siliconix

Part Number SI7234DP
Description Dual N-Channel 12-V (D-S) MOSFET
Page 13 Pages

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New Product
Si7234DP
Vishay Siliconix
Dual N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0034 at VGS = 4.5 V
12
0.005 at VGS = 2.5 V
ID (A)a
60
60
Qg (Typ.)
37 nC
PowerPAK® SO-8
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
APPLICATIONS
• Synchronous Rectification
• DC-DC Point-of-Load
RoHS
COMPLIANT
6.15 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7234DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 85 °C
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
12
± 12
60a
60a
24.8b, c
20b, c
80
38
2.9b, c
46
29
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
2.2
35 °C/W
2.7
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68700
S-81219-Rev. A, 02-Jun-08
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Si7234DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 4.5 V, ID = 20 A
VGS = 2.5 V, ID = 20 A
VDS = 6 V, ID = 20 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 6 V, VGS = 10 V, ID = 20 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 6 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 6 V, RL = 0.6 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 6 V, RL = 0.6 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
12
0.6
20
Typ. Max. Unit
6
- 4.5
0.0028
0.004
100
1.5
± 100
1
10
0.0034
0.005
V
mV/°C
V
nA
µA
A
Ω
S
5000
1500
800
80
37
7.4
7.2
2.5
30
15
90
25
15
10
50
10
0.8
40
30
22
18
120
56
5
45
25
135
40
25
15
75
15
60
80
1.2
60
45
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 68700
S-81219-Rev. A, 02-Jun-08
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Si7234DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
VGS = 5 thru 2.5 V
60
10
8
6
40
VGS = 2 V
4
20
0
0.0
0.0050
VGS = 1.5 V
0.5 1.0 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
2
0
0.0
6000
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
0.0045
0.0040
VGS = 2.5 V
0.0035
0.0030
0.0025
VGS = 4.5 V
0.0020
0
20 40 60 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 20 A
8
6
VDS = 6 V
VDS = 9.6 V
4
4800
Ciss
3600
2400
1200
Crss
0
02
Coss
46
8 10
VDS - Drain-to-Source Voltage (V)
Capacitance
12
1.6
ID = 20 A
1.4
1.2
VGS = 4.5 V
VGS = 2.5 V
1.0
2 0.8
0
0 20 40 60 80
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68700
S-81219-Rev. A, 02-Jun-08
www.vishay.com
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Si7234DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.010
TJ = 150 °C
10
TJ = 25 °C
0.008
0.006
0.004
TJ = 125 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
0.002
TJ = 25 °C
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1.2
ID = 250 µA
1.0
40
30
0.8 20
0.6 10
0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10 1 ms
10 ms
100 ms
1
1s
10 s
0.1 DC
0.01
0.01
TA = 25 °C
Single Pulse
0.1
BVDSS
Limited
1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 68700
S-81219-Rev. A, 02-Jun-08
Datasheet pdf - http://www.DataSheet4U.net/




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