SI7232DN Datasheet PDF - Vishay Siliconix


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SI7232DN
Vishay Siliconix

Part Number SI7232DN
Description Dual N-Channel 20-V (D-S) MOSFET
Page 13 Pages

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Si7232DN
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0164 at VGS = 4.5 V
20 0.020 at VGS = 2.5 V
0.024 at VGS = 1.8 V
ID (A)
25f
25f
24.6
Qg (Typ.)
12 nC
PowerPAK® 1212-8
3.30 mm
S1
1
G1
2
3.30 mm
S2
3 G2
4
D1
8
D1
7
D2
6 D2
5
Bottom View
Ordering Information: Si7232DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC
• Notebook System Power
• POL
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
20
±8
25f
23.8
10a, b
8a, b
40
19
2.2a, b
15
11
23
14.8
2.6a, b
1.7a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
38
4.3
48 °C/W
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Package Limited.
Document Number: 68986
S09-1499-Rev. B, 10-Aug-09
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Si7232DN
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 10 A
VGS = 2.5 V, ID = 9 A
Forward Transconductancea
VGS = 1.8 V, ID = 8.2 A
gfs VDS = 10 V, ID = 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 8 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 10 V, RL = 1.25 Ω
ID 8 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 1.25 Ω
ID 8 A, VGEN = 8 V, Rg = 1 Ω
TC = 25 °C
IS = 8 A, VGS = 0 V
IF = 8 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max. Unit
20 V
22
mV/°C
-3
0.4 1 V
± 100 nA
1
µA
10
20 A
0.0135 0.0164
0.016 0.020
Ω
0.019 0.024
47 S
1220
180
80
21
12
2
1.3
1.8
10
10
35
10
10
10
25
10
32
18
3.6
15
15
55
15
15
15
40
15
pF
nC
Ω
ns
19
A
40
0.81 1.2
V
20 30 ns
15 25 nC
12.5
ns
7.5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68986
S09-1499-Rev. B, 10-Aug-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 20
Si7232DN
Vishay Siliconix
VGS = 5 V thru 2 V
30
VGS = 1.5 V
20
10
0
0.0
0.040
VGS = 1 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.035
0.030
0.025
0.020
VGS = 1.8 V
VGS = 2.5 V
0.015
0.010
0
VGS = 10 V
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 10 A
6
VDS = 10 V
4
VDS = 16 V
2
16
12
TC = 125 °C
8
TC = 25 °C
4
0 TC = - 55 °C
0.0 0.3 0.6 0.9 1.2 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
1400
1200
1000
800
600
400
200
0 Crss
0
Ciss
Coss
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.6
ID = 10 A
1.4
VGS = 1.8 V, 2.5 V, 4.5 V
1.2
1.0
0.8
0
0 3 6 9 12 15 18 21
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68986
S09-1499-Rev. B, 10-Aug-09
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Si7232DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
0.04
ID = 10 A
10
TJ = 150 °C
TJ = 25 °C
0.03
0.02
0.01
TJ = 125 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.9
0.8
0.7
ID = 250 µA
0.6
0
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
0.5 20
0.4
10
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
IDM Limited
100 µs
ID(on)
1 Limited
0.1
TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
10 s, 1 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 68986
S09-1499-Rev. B, 10-Aug-09
Datasheet pdf - http://www.DataSheet4U.net/




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