SI7228DN Datasheet PDF - Vishay Siliconix


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SI7228DN
Vishay Siliconix

Part Number SI7228DN
Description Dual N-Channel 30-V (D-S) MOSFET
Page 13 Pages

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Dual N-Channel 30-V (D-S) MOSFET
Si7228DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.020 at VGS = 10 V
30
0.025 at VGS = 4.5 V
ID (A)f
26
23
Qg (Typ.)
4.1 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 UIS Tested
Compliant to RoHS Directive 2002/95/EC
PowerPAK® 1212-8
3.30 mm
S1
1
G1
2
3.30 mm
S2
3 G2
4
D1
8
D1
7
D2
6 D2
5
Bottom View
Ordering Information: Si7228DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Synchronous Rectification
• Notebook System Power
• POL
• Low Current DC/DC
D1
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
26
21
8.8a, b
7a, b
35
19
2.2a, b
14
9.8
23
14.8
2.6a, b
1.7a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
38
4.3
48 °C/W
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on TC = 25 °C.
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
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Si7228DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 8.8 A
VGS = 4.5 V, ID = 7.8 A
VDS = 15 V, ID = 8.8 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 8.8 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 8.8 A
f = 1 MHz
VDD = 15 V, RL = 2.1 Ω
ID 7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 2.1 Ω
ID 7 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 7 A, VGS = 0 V
IF = 7 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max. Unit
30 V
34
mV/°C
-5
1 2.5 V
± 100 nA
1
µA
10
20 A
0.0165
0.0205
0.020
0.025
Ω
20 S
480
115 pF
46
8.5 13
4.1 6.2
nC
1.5
1.3
0.6 3.2 6.4 Ω
13 20
12 20
12 20
10 15
ns
5 10
10 15
15 25
10 15
19
A
35
0.8 1.2 V
20 30 ns
16 25 nC
13
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
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Si7228DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
VGS = 10 V thru 5 V
VGS = 4 V
30
25
20
10
8
6
15
10
5
0
0.0
VGS = 3 V
VGS = 2 V
0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
2
0
0.0
0.035
800
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.030
0.025
0.020
0.015
VGS = 4.5 V
VGS = 10 V
0.010
0
5 10 15 20 25 30 35
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 8.8 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 24 V
2
0
0 2 4 6 8 10
Qg - Total Gate Charge (nC)
Gate Charge
600
Ciss
400
200 Coss
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 8.8 A
1.6
1.4
VGS = 10 V
30
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
www.vishay.com
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Si7228DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.08
0.06
ID = 8.8 A
TJ = 150 °C
TJ = 25 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1.8 40
1.6
ID = 250 µA
1.4
30
20
1.2 10
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001 0.01
0.1
1
10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1
TA = 25 °C
Single Pulse
0.1
1 ms
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/




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