SI7224DN Datasheet PDF - Vishay Siliconix


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SI7224DN
Vishay Siliconix

Part Number SI7224DN
Description Dual N-Channel 30-V (D-S) MOSFET
Page 18 Pages

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Si7224DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = 10 V
Channel 1 30
0.042 at VGS = 4.5 V
0.028 at VGS = 10 V
Channel 2 30
0.035 at VGS = 4.5 V
ID (A)
6a
6a
6a
6a
Qg (Typ.)
4.5 nC
5.5 nC
PowerPAK® 1212-8
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFETs
APPLICATIONS
• Notebook PC System Power
• Low Current POL
RoHS
COMPLIANT
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7224DN-T1-E3 (Lead (Pb)-free)
Si7224DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel 1
Channel 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 30
± 16
± 20
6a
6a
6a, b, c
5.2b, c
6a
6a
6a, b, c
5.9b, c
25 30
6a 6a
1.7b, c
2.2b, c
17.8 23
11.4 14.8
2.5b, c
1.6b, c
2.6b, c
1.7b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Channel 1
Channel 2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Notes:
t 10 s
Steady State
RthJA
RthJC
40 50 38 48
5.6 7 4.3 5.4
°C/W
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 94 °C/W.
Document Number: 69500
S-81549-Rev. B, 07-Jul-08
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Si7224DN
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 16 V
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID(on)
RDS(on)
gfs
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 7.4 A
VGS = 4.5 V, ID = 5.9 A
VGS = 4.5 V, ID = 6.6 A
VDS = 15 V, ID = 6.5 A
VDS = 15 V, ID = 7.4 A
Ciss
Coss
Crss
Qg
Qgs
Qgd
Channel 1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel 2
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 6.5 A
VDS = 10 V, VGS = 10 V, ID = 7.4 A
Channel 1
VDS = 10 V, VGS = 4.5 V, ID = 6.5 A
Channel 2
VDS = 10 V, VGS = 4.5 V, ID = 7.4 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
30
V
30
37
32
mV/°C
-5
-6
1 2.2
V
1.5 3
± 100
± 100
nA
1
1
µA
10
10
15
A
15
0.027 0.035
0.022 0.028
0.032 0.042
Ω
0.029 0.035
22
S
21
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
570
720
80
pF
115
35
50
9.5 14.5
12 18
4.5 7
5.5 8.5 nC
1.5
2.5
1.2
1.7
3.3
Ω
2.7
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Document Number: 69500
S-81549-Rev. B, 07-Jul-08
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Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
Channel 1
VDD = 15 V, RL = 2.9 Ω
ID 5.2 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel 2
VDD = 15 V, RL = 2.6 Ω
ID 5.9 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
Channel 1
VDD = 15 V, RL = 2.9 Ω
ID 5.2 A, VGEN = 10 V, Rg = 1 Ω
Channel 2
VDD = 15 V, RL = 2.6 Ω
ID 5.9 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
IS = 5.2 A, VGS = 0 V
IS = 5.9 A, VGS = 0 V
trr
Channel 1
Qrr IF = 5.2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta Channel 2
IF = 5.9 A, dI/dt = 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Min.
Typ.
12
20
12
12
12
12
12
10
5
10
10
10
15
15
10
10
0.8
0.8
15
20
10
12
9
12
6
8
Max.
20
30
20
20
20
20
20
15
10
15
15
15
25
25
15
15
6
6
25
30
1.2
1.2
30
40
20
20
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69500
S-81549-Rev. B, 07-Jul-08
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Vishay Siliconix
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CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
VGS = 10 thru 4 V
20
15
VGS = 3 V
10
5
0
0.0 0.4 0.8 1.2 1.6 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
9
8
7 TC = - 55 °C
6
5
4
TC = 125 °C
3
2 TC = 25 °C
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.040
800
0.036
VGS = 4.5 V
0.032
0.028
VGS = 10 V
0.024
0.020
0
5 10 15 20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 6.5 A
8
6
4
VDS = 15 V
VDS = 24 V
25
2
0
0
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Qg - Total Gate Charge (nC)
Gate Charge
10
600 Ciss
400
200
Coss
0 Crss
0
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 6.5 A
1.6
1.4 VGS = 10 V, 4.5 V
1.2
30
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69500
S-81549-Rev. B, 07-Jul-08
Datasheet pdf - http://www.DataSheet4U.net/




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