SI7222DN Datasheet PDF - Vishay Siliconix


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SI7222DN
Vishay Siliconix

Part Number SI7222DN
Description Dual N-Channel 40 V (D-S) MOSFET
Page 14 Pages

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Dual N-Channel 40 V (D-S) MOSFET
Si7222DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.042 at VGS = 10 V
40
0.047 at VGS = 4.5 V
ID (A)
6e
5e
Qg (Typ.)
8 nC
PowerPAK 1212-8
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free)
Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
APPLICATIONS
• Primary Side Switch
• Synchronus Rectification
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
± 12
V
TC = 25 °C
6e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
5e
5.7a, b
Pulsed Drain Current
TA = 70 °C
IDM
4.3a, b
24
A
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
6e
2.0a, b
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
13
8.5
mJ
TC = 25 °C
17.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
11.4
2.5a, b
W
TA = 70 °C
1.6a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
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Si7222DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 94 °C/W.
Symbol
RthJA
RthJC
Typical
38
5.5
Maximum
50
7
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5.7 A
VGS = 4.5 V, ID = 4.3 A
Forward Transconductancea
gfs VDS = 15 V, ID = 5.7 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 20 V, VGS = 10 V, ID = 5.2 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
f = 1 MHz
VDD = 20 V, RL = 4 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 4 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Min.
40
0.6
20
Typ.
40
- 3.8
0.035
0.039
18
Max.
Unit
1.6
± 100
1
10
0.042
0.047
V
mV/°C
V
nA
µA
A
Ω
S
700
76
45
19 29
8 12
1.5
2.4
1.9
9 15
50 80
20 30
7 12
59
12 90
21 35
6 10
pF
nC
Ω
ns
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Document Number: 73439
S-83052-Rev. B, 29-Dec-08
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Si7222DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
0.76
25
17
14
11
Max.
6
24
1.2
40
26
Unit
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
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Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 10 thru 3 V
16
2.5
2.0
12 1.5
8
2V
4
0
0 1 2 34 5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.050
0.047
0.044
0.041
0.038
0.035
0.032
0.029
0.026
0.023
0.020
0
VGS = 4.5 V
VGS = 10 V
4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
6
5 ID = 5.2 A
VDS = 10 V
4
3 VDS = 20 V
2
1
0
0.0 2.2 4.4 6.6 8.8 11.0
Qg - Total Gate Charge (nC)
Gate Charge
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4
1.0
TC = 125 °C
0.5
25 °C
- 55 °C
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
1000
800 Ciss
600
400
200
0 Crss
05
Coss
10 15 20 25 30 35
VDS - Drain-to-Source Voltage (V)
Capacitance
40
2.1
ID = 5.7 A
1.8
1.5
1.2
0.9
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




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