SI7216DN Datasheet PDF - Vishay Siliconix


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SI7216DN
Vishay Siliconix

Part Number SI7216DN
Description Dual N-Channel 40-V (D-S) MOSFET
Page 14 Pages

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Dual N-Channel 40-V (D-S) MOSFET
Si7216DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.032 at VGS = 10 V
40
0.039 at VGS = 4.5 V
ID (A)
6e
5e
Qg (Typ.)
5.5 nC
PowerPAK 1212-8
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg and UIS tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Synchronus Rectification
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7216DN-T1-E3 (Lead (Pb)-free)
Si7216DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
40
± 20
6e
5e
6.5a, b
5.2a, b
20
6e
2a, b
10
5
20.8
13.3
2.5a, b
1.6a, b
- 50 to 150
260
V
A
mJ
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequade bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73771
www.vishay.com
S11-1142-Rev. C, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7216DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
t 10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 94 °C/W.
Symbol
RthJA
RthJC
Typical
38
4.5
Maximum
50
6
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
ID(on)
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 5 A
VGS 4.5 V, ID = 4 A
VDS = 15 V, ID = 5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 20 V, VGS = 10 V, ID = 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 20 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
VDD = 20 V, RL = 4
ID 5 A, VGEN = 4.5 V, Rg = 1
VDD = 20 V, RL = 4
ID 5 A, VGEN = 10 V, Rg = 1
Min.
Typ.
Max. Unit
40 V
43
- 5.8
mV/°C
1 3V
± 100 nA
1
µA
10
10 A
0.025
0.031
0.032
0.039
25 S
670
90 pF
50
12.5 19
5.5 8.5
nC
2
2
3.4 5.1
16 25
142 215
16 25
7 12
ns
9 15
57 90
19 30
5 10
www.vishay.com
Document Number: 73771
2 S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7216DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 3.2 A, dI/dt = 100 A/µs,
TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
0.8
50
40
35
15
Max. Unit
6
A
20
1.2 V
75 ns
60 nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73771
www.vishay.com
S11-1142-Rev. C, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7216DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
VGS = 10 thru 5 V
16 4 V
2.0
1.6
12 1.2
TC = 125 °C
8 0.8
4
0
0.0
0.05
3V
0.3 0.6 0.9 1.2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
0.4
0.0
0
1000
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.04
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0
6 12 18 24 30
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 5 A
8
6
4
VDS = 20 V
VDS = 40 V
VDS = 30 V
2
800
Ciss
600
400
200
0 Crss
0
Coss
8 16 24 32
VDS - Drain-to-Source Voltage (V)
Capacitance
40
1.8
ID = 5 A
1.5
VGS = 10 V
VGS = 4.5 V
1.2
0.9
0
0 3 6 9 12 15
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 73771
4 S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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