SI7186DP Datasheet PDF - Vishay Siliconix


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SI7186DP
Vishay Siliconix

Part Number SI7186DP
Description N-Channel 80-V (D-S) MOSFET
Page 13 Pages

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N-Channel 80-V (D-S) MOSFET
Si7186DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
80 0.0125 at VGS = 10 V
ID (A)a
32g
Qg (Typ.)
46 nC
PowerPAK SO-8
6.15 mm
S
1S
5.15 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7186DP-T1-E3 (Lead (Pb)-free)
Si7186DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Primary Side Switch
• POL
• Intermediate Bus Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
80
± 20
32g
32g
14.5b, c
11.5b, c
60
32g
4.5b, c
30
45
64
44
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
18
1.0
23 °C/W
1.5
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 69257
S09-0271-Rev. B, 16-Feb-09
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Si7186DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55 °C
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 10 A
VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 40 V, VGS = 0 V, f = 1 MHz
VDS = 40 V, VGS = 10 V, ID = 10 A
f = 1 MHz
VDD = 40 V, RL = 4 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 40 V, RL = 4 Ω
ID 10 A, VGEN = 10 V, Rg = 6 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
VSD IS = 4.9 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
80 V
90
mV/°C
- 11
2.5 4.5 V
± 100
nA
1
µA
10
30 A
0.0103 0.0125
Ω
18 S
2840
325
120
46
15
13
0.8
18
10
24
8
25
11
32
10
70
1.6
35
20
45
16
50
22
60
20
pF
nC
Ω
ns
0.78
58
145
43
15
32
60
1.2
90
230
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69257
S09-0271-Rev. B, 16-Feb-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
VGS = 10 V thru 7 V
3.0
50 2.4
40
1.8
30
1.2
20 6 V
0.6
10
0
0
0.0120
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0.0
0
3600
Si7186DP
Vishay Siliconix
TC = 125 °C
25 °C
- 55 °C
2468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
0.0115
0.0110
VGS = 10 V
2880
2160
Ciss
0.0105
0.0100
0.0095
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
60
10
ID = 10 A
8
VDS = 20 V
VDS = 40 V
VDS = 60 V
6
1440
720
Coss
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
2.1
ID = 10 A
1.8
1.5
VGS = 10 V
30
4 1.2
2 0.9
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69257
S09-0271-Rev. B, 16-Feb-09
www.vishay.com
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Si7186DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10 0.08
ID = 10 A
150 °C
1
0.1
25 °C
0.06
0.04
0.01
0.001
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VDS - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.3
0.0
125 °C
0.02
25 °C
0.00
4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
- 0.3
- 0.6
- 0.9
- 1.2
ID = 5 mA
ID = 250 µA
120
80
40
- 1.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
TA = 25 °C
Single Pulse
DC
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 69257
S09-0271-Rev. B, 16-Feb-09
Datasheet pdf - http://www.DataSheet4U.net/




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