SI7174DP Datasheet PDF - Vishay Siliconix


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SI7174DP
Vishay Siliconix

Part Number SI7174DP
Description N-Channel 75-V (D-S) MOSFET
Page 13 Pages

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Si7174DP
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
75 0.007 at VGS = 10 V
ID (A)a, g
60
Qg (Typ.)
47.5 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
APPLICATIONS
• Primary Side Switch
Synchronous Rectification
D
G
Bottom View
Ordering Information: Si7174DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
S
N-Channel MOSFET
Limit
75
± 20
60g
60g
21b, c
16.9b, c
80
60g
5.2b, c
40
80
104
66.5
6.25b, c
4.0b, c
- 55 to 150
260
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
g. Package limited.
Document Number: 69975
S-80787-Rev. A, 14-Apr-08
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 75 V, VGS = 0 V
VDS = 75 V, VGS = 0 V, TJ = 55 °C
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 40 V, VGS = 0 V, f = 1 MHz
VDS = 40 V, VGS = 10 V, ID = 10 A
f = 1 MHz
VDD = 40 V, RL = 10 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 40 V, RL = 10 Ω
ID 10 A, VGEN = 8 V, Rg = 6 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 4 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
75 V
76
mV/°C
- 11
2.5 4.5 V
± 100
nA
1
µA
10
40 A
0.0057 0.007
Ω
34 S
2770
345
140
47.5 72
13.8
14.4
0.3 1.2 2.4
16 30
11 22
28 50
9 18
21 40
11 22
38 70
12 24
pF
nC
Ω
ns
0.75
47
103
36
11
60
80
1.2
95
210
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69975
S-80787-Rev. A, 14-Apr-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
VGS = 10 thru 6 V
60
56 48
42 36
28 24
14
VGS = 5 V
12
Si7174DP
Vishay Siliconix
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0
0
0.0080
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0
0
4000
2468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
0.0074
0.0068
0.0062
VGS = 8 V
VGS = 10 V
3200
2400
1600
Ciss
0.0056
0.0050
0
14 28 42 56
ID - Drain Current (A)
On-Resistance vs. Drain Current
70
10
ID = 10 A
8
6
VDS = 20 V
4
VDS = 40 V
VDS = 60 V
800 Coss
0 Crss
0
15 30 45 60
VDS - Drain-to-Source Voltage (V)
Capacitance
75
2.0
ID = 10 A
1.7
VGS = 10 V
1.4
VGS = 8 V
1.1
2 0.8
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69975
S-80787-Rev. A, 14-Apr-08
www.vishay.com
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Si7174DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
10
TJ = 150 °C
1
TJ = 25 °C
0.04
0.03
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.6
0.02
0.01
TJ = 125 °C
0.00
TJ = 25 °C
4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2 160
- 0.2
- 0.6
ID = 5 mA
120
80
- 1.0
- 1.4
- 50 - 25
ID = 250 µA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1 10 s
TA = 25 °C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69975
S-80787-Rev. A, 14-Apr-08
Datasheet pdf - http://www.DataSheet4U.net/




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