SI7164DP Datasheet PDF - Vishay Siliconix


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SI7164DP
Vishay Siliconix

Part Number SI7164DP
Description N-Channel 60-V (D-S) MOSFET
Page 13 Pages

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New Product
Si7164DP
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.00625 at VGS = 10 V
ID (A)a
60
Qg (Typ.)
49.5 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
RoHS
COMPLIANT
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7164DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Primary Side Switch
• POL
Intermediate Bus Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
60
± 20
60g
60g
23.5b, c
18.8b, c
80
60g
5.2b, c
50
125
104
66.5
6.25b, c
4.0b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
15
0.9
20 °C/W
1.2
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
g. Package limited.
Document Number: 68738
S-81581-Rev. A, 07-Jul-08
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Si7164DP
Vishay Siliconix
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 10 A
VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 10 A
f = 1 MHz
VDD = 30 V, RL = 3 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 30 V, RL = 3 Ω
ID 10 A, VGEN = 8 V, Rg = 6 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
VSD IS = 4 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
60
2.5
40
0.4
Typ. Max. Unit
66
- 10
0.005
30
V
mV/°C
4.5
± 100
1
10
0.00625
V
nA
µA
A
Ω
S
2830
425
150
49.5
15.1
12.2
1.2
21
8
30
9
23
11
40
11
75
2.4
40
16
55
18
45
22
70
20
pF
nC
Ω
ns
0.75
41
64
27
14
60
80
1.2
80
130
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 68738
S-81581-Rev. A, 07-Jul-08
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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80 10
VGS = 10 thru 6 V
64
8
48 6
TC = 25 °C
32
VGS = 5 V
16
0
0.0
0.0065
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.0061
0.0057
VGS = 8 V
4
2
TC = 125 °C
TC = - 55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3650
2920
Ciss
2190
10
0.0053
0.0049
VGS = 10 V
0.0045
0
14 28 42 56
ID - Drain Current (A)
On-Resistance vs. Drain Current
70
10
ID = 10 A
8
VDS = 20 V
VDS = 30 V
6
VDS = 40 V
4
1460
730
Coss
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 10 A
1.7
VGS = 10 V
30
1.4 VGS = 8 V
1.1
2 0.8
0
0.0 10.4 20.8 31.2 41.6 52.0
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68738
S-81581-Rev. A, 07-Jul-08
www.vishay.com
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Si7164DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
10
TJ = 150 °C
1
TJ = 25 °C
0.04
0.03
ID = 10 A
0.1
0.01
0.02
TJ = 125 °C
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.6
0.3
0.0
- 0.3
- 0.6
ID = 5 mA
- 0.9
- 1.2
ID = 250 µA
TJ = 25 °C
0.00
4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
- 1.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1 10 s
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
BVDSS
Limited
10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 68738
S-81581-Rev. A, 07-Jul-08
Datasheet pdf - http://www.DataSheet4U.net/




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