SI7141DP Datasheet PDF - Vishay Siliconix


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SI7141DP
Vishay Siliconix

Part Number SI7141DP
Description P-Channel 20-V (D-S) MOSFET
Page 7 Pages

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Si7141DP
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0019 at VGS = - 10 V
- 20
0.0030 at VGS = - 4.5 V
ID (A)
- 60d
- 60d
PowerPAK SO-8
Qg (Typ.)
128 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
S
1S
5.15 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7141DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Adaptor Switch
• Battery Switch
• Load Switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)e, f
Limit
- 20
± 20
- 60d
- 60d
- 42.7b
- 34b
- 100
- 60d
- 5.6a, b
- 40
80
104
66.6
6.25a, b
4.0a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Case
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
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Si7141DP
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 25 A
VGS = - 4.5 V, ID = - 20 A
VDS = - 10 V, ID = - 25 A
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
VDD = - 10 V, RL = 1 Ω
ID - 10 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 10 V, RL = 1 Ω
ID - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
Continous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 5 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 1.0
- 40
0.4
Typ.
Max.
Unit
- 16
5.7
0.0015
0.0024
103
- 2.3
± 100
-1
-5
0.0019
0.0030
V
mV/°C
V
nA
µA
A
Ω
S
14 300
2300
2600
265
128
36
42
1.7
25
16
130
38
130
120
100
55
400
194
3.4
50
30
220
70
220
200
180
100
pF
nC
Ω
ns
- 0.71
42
36
18
24
- 60
- 100
- 1.1
80
72
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS = 10 V thru 4 V
80
10
8
Si7141DP
Vishay Siliconix
60 VGS = 3 V
40
20
0
0.0
0.0030
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.0026
0.0022
VGS = 4.5 V
6
4
2
0
0
18 000
14 400
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
10 800
5
0.0018
0.0014
VGS = 10 V
0.0010
0
10
8
6
4
14 28 42 56
ID - Drain Current (A)
On-Resistance vs. Drain Current
70
ID = 20 A
VDS = 10 V
VDS = 5 V
VDS = 15 V
2
7200
3600
0
0
Coss
Crss
5 10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 25 A
1.3
VGS = 10 V
1.1
VGS = 4.5 V
0.9
20
0
0 60 120 180 240
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
300
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7141DP
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.010
10 0.008
ID = 25 A
1 TJ = 150 °C
0.006
TJ = 25 °C
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.004
0.002
TJ = 125 °C
TJ = 25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.6
0.4
0.2
0.0
- 0.2
ID = 250 µA
ID = 5 mA
160
120
80
40
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 10 ms
100 ms
1
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
Datasheet pdf - http://www.DataSheet4U.net/




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