SI7137DP Datasheet PDF - Vishay Siliconix


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SI7137DP
Vishay Siliconix

Part Number SI7137DP
Description P-Channel 20-V (D-S) MOSFET
Page 13 Pages

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Si7137DP
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.00195 at VGS = - 10 V
0.0025 at VGS = - 4.5 V
0.0039 at VGS = - 2.5 V
ID (A)
- 60d
- 60d
- 60d
PowerPAK SO-8
Qg (Typ.)
183 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III P-Channel Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
S
1S
5.15 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
APPLICATIONS
• Adaptor Switch
• Battery Switch
• Load Switch
G
S
D
Ordering Information: Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)e, f
Limit
- 20
± 12
- 60d
- 60d
- 42a, b
- 33.7a, b
- 100
- 60d
- 5.6a, b
- 50
125
104
66.6
6.25a, b
4.0a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Case
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69063
S09-0865-Rev. D, 18-May-09
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 25 A
VGS = - 4.5 V, ID = - 20 A
VGS = - 2.5 V, ID = - 15 A
VDS = - 10 V, ID = - 25 A
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
f = 1 MHz
VDD = - 10 V, RL = 1 Ω
ID - 10 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 10 V, RL = 1 Ω
ID - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 5 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.5
- 40
0.9
Typ.
Max.
Unit
- 14.5
4.1
0.0016
0.002
0.0031
95
- 1.4
± 100
-1
-5
0.00195
0.0025
0.0039
V
mV/°C
V
nA
µA
A
Ω
S
20 000
2150
2650
390
188
33.6
46
1.8
20
14
230
72
100
150
230
110
585
282
3.6
40
28
400
125
170
255
390
190
pF
nC
Ω
ns
- 0.64
88
105
25
63
- 60
- 100
- 1.1
140
160
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69063
S09-0865-Rev. D, 18-May-09
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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS = 10 V thru 3 V
80
60
VGS = 2 V
10
8
6
TC = - 55 °C
40
20
0
0.0
0.0040
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.0034
0.0028
0.0022
VGS = 2.5 V
VGS = 4.5 V
4
TC = 25 °C
2
TC = 125 °C
0
0.0 0.6 1.2 1.8 2.4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
28 000
22 400
Ciss
3.0
16 800
11 200
0.0016
VGS = 10 V
0.0010
0
16 32 48 64
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 20 A
8
VDS = 10 V
VDS = 15 V
6
80
4
VDS = 20 V
2
5600
Crss
0
0
Coss
5 10
15
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.5
ID = - 25 A
1.3
VGS = 10 V
1.1 VGS = 2.5 V
0.9
0.7
0
0 80 160 240 320
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69063
S09-0865-Rev. D, 18-May-09
400
0.5
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
TJ = 150 °C
10
0.010
0.008
TJ = 25 °C
1 0.006
ID = - 25 A
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.8
0.6
ID = 250 µA
0.4
0.2 ID = 1 mA
0.0
- 0.2
0.004
0.002
TJ = 125 °C
TJ = 25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
- 0.4
- 50 - 25
0 25 50 75 100 125
TJ - Temperature (°C)
Threshold Voltage
150
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
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10 10 ms
100 ms
1
1s
10 s
0.1 DC
0.01
0.01
TA = 25 °C
Single Pulse
0.1 1
BVDSS
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 69063
S09-0865-Rev. D, 18-May-09
Datasheet pdf - http://www.DataSheet4U.net/




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