SI7120ADN Datasheet PDF - Vishay Siliconix


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SI7120ADN
Vishay Siliconix

Part Number SI7120ADN
Description N-Channel 60 V (D-S) MOSFET
Page 12 Pages

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Si7120ADN
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)
0.021 at VGS = 10 V
0.031 at VGS = 4.5 V
ID (A)
9.5
7.9
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: Si7120ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
9.5
7.6
3.2
3.8
2.4
Steady State
60
± 20
6.0
4.8
40
1.3
22
24
1.5
1.0
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t 10 s
Steady State
RthJA
26
65
33
81 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72959
S10-1041-Rev. A, 03-May-10
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Si7120ADN
Vishay Siliconix
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 7.9 A
VDS = 15 V, ID = 9.5 A
IS = 3.2 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 10 V, ID = 9.5 A
VDD = 30 V, RL = 30 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 3.2 A, dI/dt = 100 A/µs
Min.
Typ.
Max. Unit
1.5 2.5 3.0 V
± 100 nA
1
µA
5
30 A
0.0175
0.025
0.021
0.031
Ω
35 S
0.78 1.2
V
30 45
6.9 nC
5.8
0.65 1.3 1.95 Ω
14 25
12 20
50 80 ns
12 20
60 100
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72959
S10-1041-Rev. A, 03-May-10
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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
VGS = 10 V thru 5 V
30
25
20
4V
15
10
5
3V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
10
5
0
0.0
0.05 3000
TC = 125 °C
25 °C
- 55 °C
1.0 2.0 3.0 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5.0
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0
0 5 10 15 20 25 30 35 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 10 V
ID = 9.5 A
8
6
4
2
0
0 6 12 18 24 30
Qg - Total Gate Charge (nC)
Gate Charge
2500
2000
Ciss
1500
1000
500
Coss
0 Crss
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
2.0
1.8 VGS = 10 V
ID = 9.5 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72959
S10-1041-Rev. A, 03-May-10
www.vishay.com
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New Product
Si7120ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 0.10
TJ = 150 °C
10
0.08
0.06
ID = 9.5 A
TJ = 25 °C
0.04
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
ID = 250 μA
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01 0.1
1 10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM Limited
P(t) = 100 ms
10
ID(on)
1 Limited
P(t) = 1 ms
P(t) = 10 ms
0.1
TA = 25 °C
Single Pulse
P(t) = 100 ms
P(t) = 1 s
P(t) = 10 s
0.01
0.1
BVDSS Limited
DC
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
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Document Number: 72959
S10-1041-Rev. A, 03-May-10
Datasheet pdf - http://www.DataSheet4U.net/




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