SI7119DN Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI7119DN
Vishay Siliconix

Part Number SI7119DN
Description P-Channel 200-V (D-S) MOSFET
Page 13 Pages

SI7119DN datasheet pdf
View PDF for PC
SI7119DN pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
P-Channel 200-V (D-S) MOSFET
Si7119DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 200
1.05 at VGS = - 10 V
1.10 at VGS = - 6.0V
ID (A)
- 3.8e
- 3.6e
Qg (Typ.)
10.6 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % UIS and Rg Tested
PowerPAK 1212-8
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: Si7119DN-T1-E3 (Lead (Pb)-free)
Si7119DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
VDS
VGS
ID
IDM
IS
IAS
EAS
- 200
± 20
- 3.8e
- 3.0e
- 1.2a, b
- 0.95a, b
-5
- 5e
- 3.0a, b
5
1.25
V
A
mJ
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
52
33
3.7a, b
2.4a, b
- 50 to 150
260
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. TC = 25 °C.
Document Number: 74251
S-83052-Rev. B, 29-Dec-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7119DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
28
2.9
Maximum
35
3.8
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 200 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 1 A
VGS = - 6 V, ID = - 1 A
VDS = - 15 V, ID = - 1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 50 V, VGS = 0 V, f = 1 MHz
VDS = - 100 V, VGS = - 10 V, ID = - 1 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 100 V, VGS = - 6 V, ID = - 1 A
f = 1 MHz
VDD = - 100 V, RL = 100 Ω
ID - 1 A, VGEN = - 6 V, Rg = 1 Ω
VDD = - 100 V, RL = 100 Ω
ID - 1 A, VGEN = - 10 V, Rg = 1 Ω
TC = 25 °C
IS = - 1 A
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 200
-2
-3
Typ.
- 250
- 5.5
0.86
0.88
4
666
36
25
16.2
10.6
2.5
4.9
5.3
16
16
25
16
9
11
27
12
- 0.8
66
215
48
18
Max. Unit
-4
± 100
-1
- 10
1.05
1.10
V
mV/°C
V
nA
µA
A
Ω
S
pF
25
16
nC
8
25
25
40
25
15
18
42
20
-5
-5
- 1.2
90
270
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74251
S-83052-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6 1.5
5
1.2
VGS = 10 thru 5 V
4
0.9
3
0.6
2
1 4 V 0.3
0
0
1.200
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
0.0
0
1000
Si7119DN
Vishay Siliconix
TC = 125 °C
TC = 25 °C
TC = - 55 °C
246
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
8
1.120
1.040
0.960
VGS = 6 V
800
Ciss
600
400
0.880
VGS = 10 V
0.800
0.0
1.2 2.4 3.6 4.8
ID - Drain Current (A)
On-Resistance vs. Drain Current
6.0
10
ID = 1 A
8
VDS = 50 V
VDS = 100 V
6
4
VDS = 150 V
200
Coss
0 Crss
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
2.4
ID = 1 A
2.0
1.6
VGS = 10 V
100
1.2 VGS = 6 V
2 0.8
0
0.0 3.4 6.8 10.2 13.6 17.0
Qg - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74251
S-83052-Rev. B, 29-Dec-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7119DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 5
TJ = 150 °C
10
4
3
1 TJ = 25 °C
2
TA = 125 °C
0.1
0.01
0
0.8
0.6
0.4
0.2
0.0
0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID = 250 µA
ID = 5 mA
1
TA = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
1 ms
1
10 ms
0.1
0.01
0.001
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS (on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74251
S-83052-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




SI7119DN datasheet pdf
Download PDF
SI7119DN pdf
View PDF for Mobile


Similiar Datasheets : SI7119DN

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact