SI7115DN Datasheet PDF - Vishay Siliconix


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SI7115DN
Vishay Siliconix

Part Number SI7115DN
Description P-Channel 150-V (D-S) MOSFET
Page 13 Pages

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P-Channel 150 V (D-S) MOSFET
Si7115DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 150
0.295 at VGS = - 10 V
0.315 at VGS = - 6 V
ID (A)
- 8.9e
- 8.6e
Qg (Typ.)
23.2 nC
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
S
1S
2
D
5
Bottom View
3.30 mm
S
3G
4
Ordering Information:
Si7115DN-T1-E3 (Lead (Pb)-free)
Si7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1 mm
Profile
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
• H-Bridge High Side Switch for Lighting Application
S
G
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 150
± 20
V
TC = 25 °C
- 8.9
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
- 7.1
- 2.3a, b
- 1.9a, b
- 15
A
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
- 13
- 3a, b
15
11.25
mJ
TC = 25 °C
52
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
33
3.7a, b
2.4a, b
- 50 to 150
260
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Based on TC = 25 °C.
Document Number: 73864
www.vishay.com
S11-1908-Rev. C, 26-Sep-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7115DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 150 V, VGS = 0 V
VDS = - 150 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 4 A
VGS = - 6 V, ID = - 3 A
VDS = - 15 V, ID = 4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 50 V, VGS = 0 V, f = 1 MHz
VDS = - 75 V, VGS = - 10 V, ID = - 3 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 75 V, VGS = - 6 V, ID = - 3 A
f = 1 MHz
VDD = - 75 V, RL = 25
ID - 3 A, VGEN = - 6 V, Rg = 1
VDD = - 75 V, RL = 25
ID - 3 A, VGEN = - 10 V, Rg = 1
TC = 25 °C
IS = - 3 A
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 150
-2
-8
1.3
Typ.
- 165
- 6.6
0.245
0.260
12
1190
61
42
27.5
23.2
5.4
8.4
6.1
20
95
38
34
11
28
52
35
- 0.8
65
180
45
20
Max.
Unit
-4
± 100
-1
- 10
0.295
0.315
V
mV/°C
V
nA
µA
A
S
pF
42
35
nC
9.2
30
145
60
51
18
42
78
53
- 13
- 15
- 1.2
90
270
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 73864
2 S11-1908-Rev. C, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
VGS = 10 thru 6 V
16
2.0
1.6
12 5 V 1.2
8 0.8
Si7115DN
Vishay Siliconix
TC = 125 °C
4
0
0
0.6
4V
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
0.4
0.0
0
1700
25 °C
- 55 °C
12345
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
6
0.5
0.4
VGS = 6 V
0.3
VGS = 10 V
0.2
0.1
0
4 8 12 16
ID - Drain Current (A)
20
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 3 A
8
6
VDS = 250 V
VDS = 100 V
4 VDS = 75 V
2
0
0 6 12 18 24 30
Qg - Total Gate Charge (nC)
Gate Charge
1360
1020
Ciss
680
340
Coss
0 Crss
0
20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
100
2.2
1.9 ID = 4 A
1.6
1.3
VGS = 10 V
VGS = 6 V
1.0
0.7
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73864
www.vishay.com
S11-1908-Rev. C, 26-Sep-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si7115DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 2.0
TJ = 150 °C
25 °C
10
1.6
1.2
1
0.1
0.00
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
1.5
Source-Drain Diode Forward Voltage
1.0
0.7
ID = 250 µA
0.4
ID = 5 mA
0.1
0.8
125 °C
0.4
25 °C
0.0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
- 0.2
10
- 0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.01
0.1 1
10
Time (s)
100
Single Pulse Power, Junction-to-Ambient
10
1
0.1
Limited by R DS(on)*
100
*Limited by rDS(on)
10
1
0.1
1 ms
10 ms
100 ms
1s
10 s
dc
TA = 25 °C
Single Pulse
0.01
0.01 0.1 1 10 100
VDS Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
1 ms
10 ms
100 ms
0.01
TA = 25 °C
Single Pulse
1s
10 s
DC
0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 73864
4 S11-1908-Rev. C, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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