SI7114ADN Datasheet PDF - Vishay Siliconix


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SI7114ADN
Vishay Siliconix

Part Number SI7114ADN
Description N-Channel 30-V (D-S) MOSFET
Page 7 Pages

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Si7114ADN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V
30
0.0098 at VGS = 4.5 V
ID (A)a, g
35
35
Qg (Typ.)
10.2 nC
PowerPAK® 1212-8
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
100 % UIS Tested
APPLICATIONS
• Synchronous Rectification
RoHS
COMPLIANT
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: Si7114ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
30
± 20
35 g
35g
18b, c
14.5b, c
60
30
45
32
3.2b, c
39
25
3.7b, c
2.4b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
26
2.4
Maximum
34
3.2
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Document Number: 68932
S-82616-Rev. B, 03-Nov-08
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Si7114ADN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 16 A
VDS = 15 V, ID = 18 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 19 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 19 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
0.3
Typ. Max. Unit
33
-6
0.0062
0.0081
50
2.5
± 100
1
5
0.0075
0.0098
V
mV/°C
V
nA
µA
Ω
S
1230
275
105
21
10.2
3.9
3.2
1.6
20
14
20
10
11
8
20
7
0.8
24
20
16
8
32
20
3.2
30
21
30
20
20
16
30
14
32
60
1.2
36
30
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 68932
S-82616-Rev. B, 03-Nov-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
4
VGS = 10 thru 4 V
45
3
Si7114ADN
Vishay Siliconix
TC = - 55 °C
30 VGS = 3 V
15
0
0
0.012
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
0.009
0.006
VGS = 4.5 V
VGS = 10 V
0.003
0
20 40 60 80 100
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 18 A
8
VDS = 15 V
6
VDS = 24 V
4
2
0
0 4 8 12 16 20 24
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68932
S-82616-Rev. B, 03-Nov-08
2
1
0
0.0
1600
1200
TC = 25 °C
TC = 125 °C
0.6 1.2 1.8 2.4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
3.0
800
400 Coss
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 18 A
1.5
VGS = 10 V
30
1.2
VGS = 4.5 V
0.9
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7114ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.020
10
TJ = 150 °C
1
TJ = 25 °C
0.015
0.010
0.005
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.3 0.6 0.9
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.3
2.0
ID = 250 µA
1.7
1.4
1.1
0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.000
0 4 8 12 16 20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
50
40
30
20
10
0
0.001 0.01
0.1
1 10 100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100 µs
1
0.1
TA = 25 °C
Single Pulse
1 ms
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68932
S-82616-Rev. B, 03-Nov-08
Datasheet pdf - http://www.DataSheet4U.net/




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