SI7113DN Datasheet PDF - Vishay Siliconix


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SI7113DN
Vishay Siliconix

Part Number SI7113DN
Description P-Channel 100-V (D-S) MOSFET
Page 13 Pages

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P-Channel 100-V (D-S) MOSFET
Si7113DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.134 at VGS = - 10 V
0.145 at VGS = - 4.5V
ID (A)
- 13.2e
- 12.7e
Qg (Typ.)
16.5 nC
PowerPAK 1212-8
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• UIS and Rg Tested
RoHS
COMPLIANT
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
3.30 mm
S
1S
3.30 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7113DN-T1-E3 (Lead (Pb)-free)
Si7113DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
- 100
± 20
- 13.2e
- 10.6e
- 3.5a, b
- 2.8a, b
- 20
- 13.2e
- 3.0a, b
15
11.25
52
33
3.7a, b
2.4b, c
- 50 to 150
260
V
A
mJ
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73770
S-81544-Rev. C, 07-Jul-08
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Si7113DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditins is 81 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 100 V, VGS = 0 V
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 4 A
VGS = - 4.5 V, ID = - 3 A
VDS = - 15 V, ID = 4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = - 50 V, VGS = 0 V, f = 1 MHz
VDS = - 50 V, VGS = - 10 V, ID = - 4 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 50 V, VGS = - 4.5 V, ID = - 4 A
f = 1 MHz
VDD = - 50 V, RL = 12.5 Ω
ID - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 50 V, RL = 12.5 Ω
ID - 4 A, VGEN = - 10 V, Rg = 1 Ω
TC = 25 °C
IS = - 3 A
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 100
-1
- 10
Typ.
- 100
- 5.0
0.108
0.119
25
1480
80
60
35
16.5
4.7
8
5.3
30
110
51
40
11
13
42
10
- 0.8
46
97
36
10
Max. Unit
-3
± 100
-1
- 10
0.134
0.145
V
mV/°C
V
nA
µA
A
Ω
S
pF
55
25
nC
8
45
165
80
60
18
20
65
15
- 13.2
- 20
- 1.2
70
150
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73770
S-81544-Rev. C, 07-Jul-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 2.0
VGS = 10 thru 4 V
16 1.6
Si7113DN
Vishay Siliconix
12 1.2
8
4
0
0
0.18
3V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0.8
0.4
0.0
0
2200
TC = 125 °C
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.16
0.14
0.12
0.10
VGS = 4.5 V
VGS = 10 V
0.08
0 4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 4 A
8
VDS = 25 V
6 VDS = 75 V
VDS = 50 V
4
2
0
0 8 16 24 32 40
Qg - Total Gate Charge (nC)
Gate Charge
1760
1320
Ciss
880
440
Coss
0 Crss
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
100
2.2
ID = 4 A
1.9
1.6
1.3
VGS = 10 V
VGS = 4.5 V
1.0
0.7
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73770
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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Si7113DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 1.0
TJ = 150 °C
25 °C
10
1
0.0 0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
ID = 250 µA
0.4
0.2 ID = 5 mA
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.8
0.6
0.4
125 °C
0.2
25 °C
0.0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
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1 1 ms
10 ms
0.1 TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73770
S-81544-Rev. C, 07-Jul-08
Datasheet pdf - http://www.DataSheet4U.net/




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