SI7108DN Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI7108DN
Vishay Siliconix

Part Number SI7108DN
Description N-Channel 20-V (D-S) Fast Switching MOSFET
Page 6 Pages

SI7108DN datasheet pdf
View PDF for PC
SI7108DN pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Si7108DN
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0049 @ VGS = 10 V
20
0.0061 @ VGS = 4.5 V
ID (A)
22
19.7
Qg (Typ)
20
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: Si7108DN-T1—E3 (Lead (Pb)-Free)
FEATURES
D TrenchFETr Gen II Power MOSFET for
Ultra Low On-Resistance
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D Synchronous Rectification
D Point-of-Load Converters
D Protection Devices
D Hot Swap
D
RoHS
COMPLIANT
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
22
17.6
3.2
3.8
2.0
20
"16
60
22
24
–55 to 150
260
14
11.2
1.3
1.5
0.8
Unit
V
A
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t v 10 sec
Steady State
RthJA
24
65
33
81 _C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73216
S-51413—Rev. C, 01-Aug-05
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7108DN
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
gfs
VSD
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Qrr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "16 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 22 A
VGS = 4.5 V, ID = 19.7 A
VDS = 15 V, ID = 22 A
IS = 3.2 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 22 A
f = 1 MHz
VDD = 20 V, RL = 20 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 3.2 A, di/dt = 100 A/ms
1 2V
"100
nA
1
mA
5
40 A
0.0041
0.005
88
0.75
0.0049
0.0061
1.2
W
S
V
20 30
6.3 nC
4.9
0.7 1.4 2.1 W
10 15
10 15
60 130 ns
10 15
30 60
20 36 nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
VGS = 10 thru 4 V
50
Output Characteristics
3V
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0
VDS – Drain-to-Source Voltage (V)
www.vishay.com
2
1.2
Transfer Characteristics
60
50
40
30
20 TC = 125_C
10
0
0.0
25_C
–55_C
0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
3.0
Document Number: 73216
S-51413—Rev. C, 01-Aug-05
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7108DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.008
On-Resistance vs. Drain Current
3000
0.007
0.006
0.005
VGS = 4.5 V
2500
2000
0.004
0.003
0.002
0.001
VGS = 10 V
1500
1000
500
0.000
0
10 20 30 40 50
ID – Drain Current (A)
60
0
0
Capacitance
Ciss
Coss
Crss
4 8 12 16
VDS – Drain-to-Source Voltage (V)
20
Gate Charge
10
VDS = 10 V
8 ID = 22 A
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
1.4 ID = 22 A
6 1.2
4 1.0
2 0.8
0
0 10 20 30 40 50
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
TJ = 150_C
10
TJ = 25_C
0.6
–50 –25
0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.015
0.012
0.009
ID = 22 A
0.006
0.003
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD – Source-to-Drain Voltage (V)
Document Number: 73216
S-51413—Rev. C, 01-Aug-05
0.000
0
2468
VGS – Gate-to-Source Voltage (V)
10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7108DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-to-Ambient
50
0.2 ID = 250 mA
40
–0.0
–0.2
–0.4
30
20
–0.6
10
–0.8
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
0.1
1 10
Time (sec)
100 600
100
*Limited by rDS(on)
Safe Operating Area
IDM Limited
P(t) = 0.0001
2
1
Duty Cycle = 0.5
10
ID(on)
Limited
1
0.1
TA = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1 1
10 100
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
www.vishay.com
4
Document Number: 73216
S-51413—Rev. C, 01-Aug-05
Datasheet pdf - http://www.DataSheet4U.net/




SI7108DN datasheet pdf
Download PDF
SI7108DN pdf
View PDF for Mobile


Similiar Datasheets : SI7108DN

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact