SI7106DN Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI7106DN
Vishay Siliconix

Part Number SI7106DN
Description N-Channel 20-V (D-S) Fast Switching MOSFET
Page 6 Pages

SI7106DN datasheet pdf
View PDF for PC
SI7106DN pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Si7106DN
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.0062 at VGS = 4.5 V
0.0098 at VGS = 2.5 V
ID (A)
19.5
15.5
Qg (Typ.)
17.5 nC
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS
• Synchronous Rectification
RoHS
COMPLIANT
D
G
Bottom View
Ordering Information: Si7106DN-T1-E3 (Lead (Pb)-free)
Si7106DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
19.5 12.5
15.6 10.0
Pulsed Drain Current
IDM 60
Continuous Source Current (Diode Conduction)a
IS 3.2 1.3
Single Avalanche Current
Single Avalanche Energy
L = 0 1 mH
IAS
EAS
30
45
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.8
2.0
1.5
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7106DN
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 19.5 A
VGS = 2.5 V, ID = 15.5 A
Forward Transconductancea
gfs VDS = 15 V, ID = 19.5 A
Diode Forward Voltagea
VSD IS = 3.2 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 19.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 3.2 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
0.6 1.5 V
± 100
nA
1
µA
5
40 A
0.0051
0.0081
0.0062
0.0098
Ω
105 S
0.8 1.2
V
17.5 27
6.6
2.8
0.7 1.4 2.1
25 40
15 25
50 75
12 20
30 60
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
VGS = 10 thru 2.5 V
48
60
48
36 36
24
12
0
0.0
2V
1.5 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
24
12
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
www.vishay.com
2
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7106DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.016
3500
0.014
0.012
2800
0.010
0.008
0.006
0.004
0.002
0.000
0
VGS = 2.5 V
VGS = 4.5 V
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
60
2100
1400
700
Crss
0
0
Ciss
Coss
5 10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
5
VDS = 10 V
4 ID = 19.5 A
1.6
VGS = 4.5 V
1.4 ID = 19.5 A
20
3 1.2
2 1.0
1 0.8
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
60
TJ = 150 °C
10
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.024
0.020
0.016
ID = 5 A
0.012
0.008
ID = 19.5 A
0.004
0.000
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si7106DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 50
ID = 250 µA
0.2
40
0.0
- 0.2
- 0.4
30
20
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by
RDS(on)*
10
ID(on)
Limited
1
0.1
TA = 25 °C
Single Pulse
0
0.01
0.1
1 10 100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
2
1
Duty Cycle = 0.5
0.01
BVDSS Limited
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73142
S-81529-Rev. E, 30-Jun-08
Datasheet pdf - http://www.DataSheet4U.net/




SI7106DN datasheet pdf
Download PDF
SI7106DN pdf
View PDF for Mobile


Similiar Datasheets : SI7106DN

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact