SI7102DN Datasheet PDF - Vishay Siliconix


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SI7102DN
Vishay Siliconix

Part Number SI7102DN
Description N-Channel 12-V (D-S) MOSFET
Page 14 Pages

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N-Channel 12-V (D-S) MOSFET
Si7102DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
12 0.0038 at VGS = 4.5 V
0.0047 at VGS = 2.5 V
ID (A)e
35
35
Qg (Typ.)
41 nC
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7102DN-T1-E3 (Lead (Pb)-free)
Si7102DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg Tested
APPLICATIONS
• Secondary Synchronous Rectification
• Point-of-Load
• Load Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
12
±8
35e
35e
25a, b
17.8a, b
60
35e
3.2a, b
52
33
3.8a, b
2.4a, b
- 50 to 150
260
Unit
V
A
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 74250
S-83044-Rev. B, 22-Dec-08
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Si7102DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 15 A
VGS = 2.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 5 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 6 V, VGS = 8 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 6 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 6 V, RL = 1.2 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 6 V, RL = 1.2 Ω
ID 5 A, VGEN = 8 V, Rg = 1 Ω
Min.
Typ.
Max.
Unit
12 V
12
- 3.1
mV/°C
0.4 1.0 V
± 100
nA
1
µA
10
30 A
0.0031
0.0037
0.0038
0.0047
Ω
110 S
3720
1290
840
73
41
4.5
8.5
1.4
27
125
53
12
16
55
53
9
110
62
2.1
41
190
80
18
25
85
80
15
pF
nC
Ω
ns
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Document Number: 74250
S-83044-Rev. B, 22-Dec-08
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Si7102DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 3.2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
0.61
46
30
20
26
Max.
35
60
1.2
70
50
Unit
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74250
S-83044-Rev. B, 22-Dec-08
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Si7102DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
VGS = 5 thru 1.5 V
50
2.0
1.6
40
1.2
30
0.8
20
10
0
0.0
1V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.4
0.0
0.0
0.0040
5000
0.0038
0.0036
VGS = 2.5 V
4000
3000
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
Ciss
0.0034
0.0032
VGS = 4.5 V
2000
1000
Crss
Coss
0.0030
0
10 20 30 40 50 60
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8.0
ID = 10 A
6.4
4.8
3.2
VDS = 6 V
VDS = 4 V
VDS = 8 V
1.6
0
0.0 1.6 3.2 4.8 6.4 8.0
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 15 A
1.3
1.1
VGS = 2.5 V
VGS = 4.5 V
0.9
0.0
0
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15 30 45 60
Qg - Total Gate Charge (nC)
Gate Charge
75
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74250
S-83044-Rev. B, 22-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




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