SI6983DQ Datasheet PDF - Vishay Siliconix


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SI6983DQ
Vishay Siliconix

Part Number SI6983DQ
Description Dual P-Channel 20-V (D-S) MOSFET
Page 6 Pages

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Dual P-Channel 20-V (D-S) MOSFET
Si6983DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.024 at VGS = - 4.5 V
- 20 0.030 at VGS = - 2.5 V
0.042 at VGS = - 1.8 V
ID (A)
- 5.4
- 4.8
- 4.0
FEATURES
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch
• Battery Switch
Pb-free
Available
RoHS*
COMPLIANT
D1 1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6983DQ-T1
Si6983DQ-T1-E3 (Lead (Pb)-free)
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 5.4
- 4.3
- 4.6
- 3.7
Pulsed Drain Current (10 µs Pulse Width)
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.0
- 0.7
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.14 0.83
0.73 0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72367
S-60774-Rev. C, 08-May-06
Typical
86
124
52
Maximum
110
150
65
Unit
°C/W
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Si6983DQ
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 400 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.4 A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 2.5 V, ID = - 4.8 A
VGS = - 1.8 V, ID = - 4.0 A
Forward Transconductancea
gfs VDS = - 5 V, ID = - 5.4 A
Diode Forward Voltagea
VSD IS = - 1.0 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 5.4 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1.0 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 6 Ω
ID - 1 A, VGEN = - 4.5 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1.0 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min Typ Max
- 0.40
- 20
0.019
0.024
0.033
25
- 0.63
- 1.0
± 100
-1
- 25
0.024
0.030
0.042
1.1
20 30
3.0
4.5
4.5
40 60
55 85
135 200
52 80
40 70
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
30
VGS = 5 thru 2.5 V
2V
24
18
12
1.5 V
6
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
30
TC = - 55 °C
25 °C
24
125 °C
18
12
6
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72367
S-60774-Rev. C, 08-May-06
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Si6983DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.10
0.08
0.06
0.04
VGS = 1.8 V
VGS = 2.5 V
0.02
0.00
0
VGS = 4.5 V
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
3500
3000
2500
2000
Ciss
1500
1000
Coss
500
Crss
0
04
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
6
VDS = 10 V
5 ID = 5.4 A
4
3
2
1
1.60
1.40
VGS = 4.5 V
ID = 5.4 A
1.20
1.00
0.80
0
0
100
5 10 15 20 25
Qg - Total Gate Charge (nC)
Gate Charge
30
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
0.60
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
0.07
0.06
0.05
0.04
ID = 5.4 A
0.03
0.02
0.01
0.00
012345678
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72367
S-60774-Rev. C, 08-May-06
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Si6983DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.4
0.3
0.2 ID = 400 µA
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by rDS(on)
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
1 ms
1 10 ms
100 ms
0.1 TC = 25 °C
Single Pulse
1s
10 s
dc
0.01
0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
100
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 124 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72367
S-60774-Rev. C, 08-May-06
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