SI6981DQ Datasheet PDF - Vishay Siliconix


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SI6981DQ
Vishay Siliconix

Part Number SI6981DQ
Description Dual P-Channel 20-V (D-S) MOSFET
Page 6 Pages

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Dual P-Channel 20-V (D-S) MOSFET
Si6981DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.031 at VGS = - 4.5 V
- 20 0.041 at VGS = - 2.5 V
0.058 at VGS = - 1.8 V
ID (A)
- 4.8
- 4.2
- 3.5
FEATURES
Halogen-free
TrenchFET® Power MOSFETs
APPLICATIONS
• Load Switch
• Battery Switch
S1 S2
RoHS
COMPLIANT
TSSOP-8
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Top View
Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
D1
P-Channel MOSFET
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 4.8
- 3.9
- 4.1
- 3.2
Pulsed Drain Current (10 µs Pulse Width)
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.0
- 0.7
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.14 0.83
0.73 0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
86
124
59
Maximum
110
150
75
Unit
°C/W
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
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Si6981DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 300 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 4.8 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 4.2 A
VGS = - 1.8 V, ID = - 3.5 A
Forward Transconductancea
gfs VDS = - 5 V, ID = - 4.8 A
Diode Forward Voltagea
VSD IS = - 1.0 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 4.8 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 10 Ω
ID - 1 A, VGEN = - 4.5 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1.0 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
- 0.40
- 20
0.026
0.034
0.046
17
- 0.65
- 0.9
± 100
-1
- 25
0.031
0.041
0.058
- 1.1
15 25
2.4
3.8
35 55
55 85
120 180
52 80
30 50
Unit
V
nA
µA
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 5 thru 2.5 V
24
30
24
18 2 V
18
12 12
TC = - 55 °C
25 °C
125 °C
6
1.5 V
6
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 72226
S-81221-Rev. B, 02-Jun-08



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10 2500
Si6981DQ
Vishay Siliconix
0.08
0.06
VGS = 1.8 V
0.04
0.02
VGS = 2.5 V
VGS = 4.5 V
0.00
0
6 12 18 24
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
6
VDS = 10 V
5 ID = 4.8 A
4
3
2
1
0
0 4 8 12 16
Qg - Total Gate Charge (nC)
Gate Charge
20
40
TJ = 150 °C
10
1 TJ = 25 °C
2000
1500
Ciss
1000
Coss
500
Crss
0
0
4
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 4.8 A
1.4
20
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
ID = 4.8 A
0.04
0.02
0.2
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.6
0.00
02468
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
www.vishay.com
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Si6981DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 200
0.3
0.2
0.1
0.0
- 0.1
ID = 300 µA
160
120
80
40
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited
10 by RDS(on)*
1 ms
2
1
Duty Cycle = 0.5
1 10 ms
0.1
TC = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 124 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72226
S-81221-Rev. B, 02-Jun-08




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