SI6926ADQ Datasheet PDF - Vishay Siliconix


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SI6926ADQ
Vishay Siliconix

Part Number SI6926ADQ
Description Dual N-Channel 2.5-V (G-S) MOSFET
Page 11 Pages

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Si6926ADQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 4.5 V
0.033 at VGS = 3.0 V
20
0.035 at VGS = 2.5 V
0.043 at VGS = 1.8 V
ID (A)
4.5
4.2
3.9
3.6
FEATURES
Halogen-free
D1
RoHS
COMPLIANT
D2
D1 1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6926ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
4.5 4.1
3.6 3.3
Pulsed Drain Current (10 µs Pulse Width)
IDM 20
Continuous Source Current (Diode Conduction)a
IS 0.83 0.69
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.0 0.83
0.64 0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t 10 s.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
90
126
65
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72754
S-81056-Rev. B, 12-May-08
Maximum
125
150
80
Unit
°C/W
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Si6926ADQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
Zero Gate Voltage Drain Current
IGSS
IDSS
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currentb
ID(on)
VDS 5 V, VGS = 5 V
VGS = 4.5 V, ID = 4.5 A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 3.0 V, ID = 4.2 A
VGS = 2.5 V, ID = 3.9 A
VGS = 1.8 V, ID = 3.6 A
Forward Transconductanceb gfs VDS = 10 V, ID = 4.5 A
Diode Forward Voltageb
Dynamica
VSD IS = 0.83 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Qg
Qgs
Qgd
Rg
td(on)
VDS = 10 V, VGS = 4.5 V, ID = 4.5 A
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
IF = 0.83 A, dI/dt = 100 A/µs
Min.
0.40
10
Typ.a
Max.
1.0
± 100
1
5
0.024
0.026
0.029
0.035
26
0.6
0.030
0.033
0.035
0.043
1.1
Unit
V
nA
µA
A
Ω
S
V
7.5 10.5
1.2 nC
1.2
1.9 Ω
6 12
16 25
46 70 ns
9 15
20 40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 20
VGS = 5 thru 2 V
16
16
12 1.5 V
12
8
4
0
0
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1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
8
TC = 125 °C
4
25 °C
- 55 °C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72754
S-81056-Rev. B, 12-May-08
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Si6926ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05 1200
0.04
0.03
VGS = 2.5 V
VGS = 3.0 V
0.02
0.01
VGS = 4.5 V
0.00
0.0
4.0 8.0 12.0 16.0
ID - Drain Current (A)
On-Resistance vs. Drain Current
20.0
1000
800
Ciss
600
400
200
0 Crss
0
Coss
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
6
VDS = 10 V
5 ID = 4.5 A
4
3
2
1
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
10
1.6
VGS = 4.5 V
ID = 4.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
20
10 TJ = 150 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.08
0.07
0.06
0.05
ID = 4.5 A
0.04
0.03
0.02
0.01
0.00
012345678
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72754
S-81056-Rev. B, 12-May-08
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Si6926ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2 30
0.1
ID = 250 µA
0.0
25
20
- 0.1
15
- 0.2
10
- 0.3
5
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited
by RDS(on) *
10
0
10-3
10-2
10-1
1
10 100 600
Time (s)
Single Pulse Power Junction-to-Ambient
IDM Limited
2
1
Duty Cycle = 0.5
1 ms
1
ID(on)
Limited
10 ms
100 ms
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 126 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72754
S-81056-Rev. B, 12-May-08
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