SI6925ADQ Datasheet PDF - Vishay Siliconix


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SI6925ADQ
Vishay Siliconix

Part Number SI6925ADQ
Description Dual N-Channel 2.5-V (G-S) MOSFET
Page 11 Pages

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Si6925ADQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.045 at VGS = 4.5 V
20 0.055 at VGS = 3.0 V
0.065 at VGS = 2.5 V
ID (A)
3.9
3.5
3.0
FEATURES
Halogen-free
RoHS
COMPLIANT
D1 D2
D1 1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6925ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
3.9 3.3
3.1 2.6
Pulsed Drain Current (10 µs Pulse Width)
IDM 30
Continuous Source Current (Diode Conduction)a
IS 1.0 0.72
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.13 0.80
0.72 0.51
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t 10 s.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
186
125
65
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 72623
S-81056-Rev. B, 12-May-08
Maximum
110
155
85
Unit
°C/W
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Si6925ADQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currentb
ID(on)
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.9 A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 3.0 V, ID = 3.5 A
VGS = 2.5 V, ID = 3.0 A
Forward Transconductanceb gfs VDS = 10 V, ID = 3.9 A
Diode Forward Voltageb
VSD IS = 1.0 A, VGS = 0 V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 6 V, VGS = 4.5 V, ID = 3.9 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 6 V, RL = 6 Ω
ID 1 A, VGEN = 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 1.0 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Min.
0.6
10
Typ.a
Max.
1.8
± 100
1
15
0.035
0.042
0.050
14
0.75
0.045
0.055
0.065
1.1
Unit
V
nA
µA
A
Ω
S
V
4.0 6
0.9 nC
1.0
1.9 Ω
40 60
50 75
20 30 ns
10 20
20 40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 5 thru 3.5 V
25
3V
20
30
25
20
15
2.5 V
10
5
2V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
15
10
5
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
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Document Number: 72623
S-81056-Rev. B, 12-May-08
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Si6925ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10 700
0.08
0.06
VGS = 2.5 V
VGS = 3.0 V
0.04
VGS = 4.5 V
0.02
0.00
0
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
600
500 Ciss
400
300
200 Coss
100
0
0
Crss
4
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
6
VDS = 6 V
5 ID = 3.9 A
4
3
2
1
1.6
VGS = 4.5 V
ID = 3.9 A
1.4
1.2
1.0
0.8
20
0
012345
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
30
TJ = 150 °C
10
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.08
0.07
0.06
0.05
ID = 3.9 A
0.04
0.03
0.02
0.01
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72623
S-81056-Rev. B, 12-May-08
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Si6925ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 100
0.2
ID = 250 µA
0.0
80
60
- 0.2
40
- 0.4
20
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited
10 by RDS(on)*
0
10-3
10-2
10-1
1
Time (s)
Single Pulse Power
IDM Limited
1 ms
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
10 ms
100 ms
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
10
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72623
S-81056-Rev. B, 12-May-08
Datasheet pdf - http://www.DataSheet4U.net/




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