SI6562DQ Datasheet PDF - Vishay Siliconix


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SI6562DQ
Vishay Siliconix

Part Number SI6562DQ
Description N- and P-Channel 2.5-V (G-S) MOSFET
Page 6 Pages

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Si6562DQ
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.030 @ VGS = 4.5 V
0.040 @ VGS = 2.5 V
0.050 @ VGS = –4.5 V
0.085 @ VGS = –2.5 V
ID (A)
"4.5
"3.9
"3.5
"2.7
TSSOP-8
D1 1 D
S1 2
Si6562DQ
S1 3
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –20
"12
"12
"4.5
"3.5
"3.6
"2.7
"30
"30
1.25 –1.25
1.0
0.64
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
Symbol
RthJA
N- or P-Channel
125
Unit
_C/W
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Si6562DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 20 V, VGS = 0 V
VDS = –20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = –20 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 4.5 V
VDS w –5 V, VGS = –4.5 V
VGS = 4.5 V, ID = 4.5 A
VGS = –4.5 V, ID = –3.5 A
VGS = 2.5 V, ID = 3.9 A
VGS = –2.5 V, ID = –2.7 A
VDS = 10 V, ID = 4.5 A
VDS = –10 V, ID = –3.5 A
IS = 1.25 A, VGS = 0 V
IS = –1.25 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 4.5 A
Qgs
P-Channel
VDS = –15 V, VGS = –4.5 V, ID = –3.5 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = 1.25 A, di/dt = 100 A/ms
IF = –1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
–0.6
30
–30
"100
"100
1
–1
25
–25
0.023
0.040
0.030
0.060
20
10
0.65
0.72
0.030
0.050
0.040
0.085
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
13 25
14.5
25
3.0
nC
3.5
3.3
3.5
22 50
27 50
40 80
30 60
50 100
ns
57 100
20 40
21 40
30 60
60 100
www.vishay.com S FaxBack 408-970-5600
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Document Number: 70720
S-56944—Rev. B, 23-Nov-98
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Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 3 V
2.5 V
24
30
24
N-CHANNEL
Transfer Characteristics
18 18
12
6
0
0
0.08
2V
1.5 V
2468
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
0.06
0.04
VGS = 2.5 V
0.02
VGS = 4.5 V
0
0 6 12 18 24
ID – Drain Current (A)
Gate Charge
4.5
VDS = 10 V
3.6 ID = 4.5 A
2.7
1.8
0.9
0
0 3 6 9 12
Qg – Total Gate Charge (nC)
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
30
15
12
6
0
0
2100
TC = 125_C
25_C
–55_C
0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
Capacitance
1800
1500
Ciss
1200
900
600 Coss
300
0
0
Crss
4 8 12 16
VDS – Drain-to-Source Voltage (V)
3.0
20
On-Resistance vs. Junction Temperature
1.8
1.6 VGS = 4.5 V
ID = 4.5 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25
0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
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Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.10
10
TJ = 150_C
TJ = 25_C
0.08
ID = 4.5 A
0.06
0.04
0.02
0
0
0.4
0.2
0.2 0.4 0.6 0.8 1.0
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 mA
1.2
–0.0
0
0
40
32
24
2468
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
10
–0.2
16
–0.4
8
–0.6
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
0.1 1
Time (sec)
2
1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
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10–2
10–1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1 10 30
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
Datasheet pdf - http://www.DataSheet4U.net/




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