SI6562CDQ Datasheet PDF - Vishay Siliconix


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SI6562CDQ
Vishay Siliconix

Part Number SI6562CDQ
Description N- and P-Channel 20-V (D-S) MOSFETs
Page 17 Pages

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Si6562CDQ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V
N-Channel 20
0.036 at VGS = 2.5 V
P-Channel
0.030 at VGS = - 4.5 V
- 20
0.045 at VGS = - 2.5 V
ID (A)
6.7a
5.2a
- 6.1a
- 5.0a
Qg (Typ.)
6.7 nC
17 nC
FEATURES
Halogen-free
TrenchFET® Power MOSFETs
APPLICATIONS
• Load Switch
• DC/DC Converter
RoHS
COMPLIANT
D1 1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
6.7 - 6.1
4.2
5.7b, c
4.5b, c
30
- 4.9
- 5.1b, c
- 4.1b, c
- 30
1.3
0.9b, c
1.6
- 1.4
- 1.0b, c
1.7
1.0 1.1
1.1b, c
1.2b, c
0.7b, c
0.76b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 145 °C/W.
Symbol
RthJA
RthJF
N-Channel
Typ. Max.
85 110
62 80
P-Channel
Typ. Max.
81 105
57 75
Unit
°C/W
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 5.7 A
VGS = - 4.5 V, ID = - 5.1 A
VGS = 2.5 V, ID = 4.4 A
VGS = - 2.5 V, ID = - 4.2 A
VDS = 10 V, ID = 5.7 A
VDS = - 10 V, ID = - 5.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 10 V, ID = 5.7 A
Qg VDS = - 10 V, VGS = - 10 V, ID = - 5.1 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 5.7 A
Qgs
P-Channel
Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.6
- 0.6
30
- 30
Typ. Max. Unit
V
22
- 21
- 3.5
3.5
mV/°C
1.5
- 1.5
± 100
± 100
1
-1
10
- 10
V
nA
µA
A
0.018
0.024
0.029
0.036
17
22
0.022
0.030
0.036
0.045
Ω
S
850
1200
150
260
70
45
15
34
6.7
17
1.8
3
0.9
5.5
2
6
23
51
11
30
pF
nC
Ω
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Document Number: 68954
S-82575-Rev. A, 27-Oct-08
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Si6562CDQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.2 Ω
ID 4.5 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 2.4 Ω
ID - 4.1 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
N-Channel
VDD = 10 V, RL = 2.2 Ω
ID 4.5 A, VGEN = 10 V, Rg = 1 Ω
P-Channel
VDD = - 10 V, RL = 2.4 Ω
ID - 4.1 A, VGEN = - 10 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
IS = 4.5 A, VGS = 0 V
IS = - 4.1 A, VGS = 0 V
trr
N-Channel
Qrr IF = 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta P-Channel
IF = - 4.1 A, dI/dt = - 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
12
30
10
25
25
45
10
15
10
10
10
10
20
45
8
15
0.8
- 0.8
15
35
6
21
7.6
18
7.4
17
Max.
20
45
15
40
40
70
15
25
15
15
15
15
30
70
15
25
1.3
- 1.4
30
- 30
1.2
- 1.2
30
55
12
35
Unit
ns
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
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Si6562CDQ
Vishay Siliconix
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 5 thru 3 V
25
10
8
20 VGS = 2.5 V
15
10
5
0
0.0
VGS = 2 V
VGS = 1.5 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
6
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
1200
0.06
VGS = 2.5 V
1000
800
Ciss
0.04
600
0.02
VGS = 4.5 V
0.00
0
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 5.6 A
8
30
400
Coss
200
Crss
0
02
4 6 8 10 12 14 16 18 20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 5.6 A
1.4
VGS = 4.5 V
6
VDS = 10 V
4
VDS = 16 V
1.2
1.0
VGS = 2.5 V
2 0.8
0
0
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3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
15
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
Datasheet pdf - http://www.DataSheet4U.net/




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