SI6552DQ Datasheet PDF - Vishay Siliconix


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SI6552DQ
Vishay Siliconix

Part Number SI6552DQ
Description Dual N- and P-Channel 20-V (D-S) MOSFET
Page 6 Pages

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Si6552DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
- 12
rDS(on) (W)
0.08 @ VGS = 4.5 V
0.11 @ VGS = 2.5 V
0.1 @ VGS = - 4.5 V
0.18 @ VGS = - 2.5 V
ID (A)
"2.8
"2.1
"2.5
"1.9
D1 S2
TSSOP-8
D1 1 D
S1 2
S1 3
Si6552DQ
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
G1
S1
N-Channel MOSFET
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"2.8
"2.3
1.0
"8
"20
1.0
0.64
- 55 to 150
- 12
"2.5
"2.0
- 1.0
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
Symbol
RthJA
N- or P-Channel
125
Unit
_C/W
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Si6552DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = - 12 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = - 5 V, VGS = - 4.5 V
VDS = 5 V, VGS = 2.5 V
VDS = - 5 V, VGS = - 2.5 V
VGS = 4.5 V, ID = 2.8 A
VGS = - 4.5 V, ID = 2.5 A
VGS = 2.5 V, ID = 2.1 A
VGS = - 2.5 V, ID = 1.9 A
VDS = 15 V, ID = 2.8 A
VDS = - 9 V, ID = - 2.5 A
IS = 1.0 A, VGS = 0 V
IS = - 1.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.8 A
Qgs
P-Channel
VDS = - 6 V, VGS = - 4.5 V, ID = - 2.5 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
N-Channel—IF = 1.0 A, di/dt = 100 A/ms
P-Channel—IF = - 1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
0.6
- 0.6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
- 10
4
-4
"100
1
-1
5
-5
V
nA
mA
A
0.08
0.1
W
0.11
0.18
12
S
7
1.2
V
- 1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
16 40
9 20
3
nC
2
6
3
37 60
21 40
66 100
35 70
56 100
ns
43 80
57 100
22 40
26 70
35 70
www.vishay.com
2-2
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
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Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 8 thru 3 V
16
16
12
2V
8
12
8
N−CHANNEL
Transfer Characteristics
TC = - 55_C
125_C
25_C
4
0
0
0.20
1V
2468
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
4
0
0
1500
123
VGS - Gate-to-Source Voltage (V)
Capacitance
4
0.15
0.10
0.05
VGS = 2.5 V
VGS = 4.5 V
0.00
0
2468
ID - Drain Current (A)
5
VDS = 10 V
ID = 2.8 A
4
Gate Charge
10
3
2
1
0
0 4 8 12 16
Qg - Total Gate Charge (nC)
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
20
1200
900
600 Ciss
300
0
0
Crss
Coss
2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
12
On-Resistance vs. Junction Temperature
2.0
VGS = 4.5 V
IDS = 2.8 A
1.6
1.2
0.8
0.4
0.0
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
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Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
30
20
TJ = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.100
0.090
0.080
TJ = 25_C
0.070
0.060
0.050
ID = 2.8 A
1
0.00
0.25 0.50 0.75 1.00 1.25
VSD - Source-to-Drain Voltage (V)
1.50
0.040
0
246
VGS - Gate-to-Source Voltage (V)
8
Threshold Voltage
1.0
Single Pulse Power
25
0.5
0.0 ID = 250 µA
- 0.5
20
15
10
5
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
0.001
0.01
0.1
Time (sec)
1
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
1 10 30
www.vishay.com
2-4
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
Datasheet pdf - http://www.DataSheet4U.net/




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