SI6542DQ Datasheet PDF - Vishay Siliconix


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SI6542DQ
Vishay Siliconix

Part Number SI6542DQ
Description Dual N- and P-Channel 20-V (D-S) MOSFET
Page 6 Pages

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Si6542DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.09 @ VGS = 10 V
0.175 @ VGS = 4.5 V
0.17 @ VGS = –10 V
0.32 @ VGS = –4.5 V
ID (A)
"2.5
"1.8
"1.9
"1.3
D1
S2
TSSOP-8
D1 1 D
S1 2
Si6542DQ
S1 3
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
G1
S
N-Channel MOSFET
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"20
–20
"20
"2.5
"1.9
"2.0
"1.5
"20
"15
1.25 –1.25
1.0
0.64
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70171
S-00873—Rev. F, 01-May-00
N- or P-Channel
125
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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Si6542DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = 20 V, VGS = 0 V
VDS = –20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = –20 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 10 V
VDS = –5 V, VGS = –10 V
VGS = 10 V, ID = 2.5 A
VGS = –10 V, ID = 1.9 A
VGS = 4.5 V, ID = 1.8 A
VGS = –4.5 V, ID = 1.3 A
VDS = 15 V, ID = 2.5 A
VDS = –15 V, ID = – 1.9 A
IS = 1.25 A, VGS = 0 V
IS = –1.25 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 10 V, ID = 2.5 A
Qgs
P-Channel
VDS = –10 V, VGS = –10 V, ID = –1.9 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = 1.25 A, di/dt = 100 A/ms
IF = –1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
–1.0
14
–10
"100
1
–1
25
–25
0.065
0.13
0.100
0.26
5
3
0.8
0.8
0.09
0.17
0.175
0.32
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7 10
7 10
0.9
nC
1.3
2.1
1.7
11 20
9 20
11 20
12 25
16 30
ns
17 30
6 15
6 15
45 70
35 70
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70171
S-00873—Rev. F, 01-May-00
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Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
6V
20
16
VGS = 10, 9 ,8 ,7 V
16
12 5 V
12
NĆCHANNEL
Transfer Characteristics
TC = –55_C
25_C
125_C
8
4
0
0
0.30
4V
3V
1234
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
0.25
0.20
VGS = 4.5 V
0.15
0.10
0.05
VGS = 10 V
0
02468
ID – Drain Current (A)
Gate Charge
10
VGS = 10 V
8 ID = 2.5 A
10
6
4
2
8
4
0
0
1000
2468
VGS – Gate-to-Source Voltage (V)
Capacitance
10
800
600
Ciss
400
200
Crss
Coss
0
0 4 8 12 16 20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V
ID = 2.5 A
1.5
1.0
0.5
0
012345678
Qg – Total Gate Charge (nC)
Document Number: 70171
S-00873—Rev. F, 01-May-00
0
–50 –25
0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-3
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Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.40
TJ = 150_C
10
0.35
0.30
TJ = 25_C
0.25
0.20
ID = 2.5 A
0.15
0.10
0.05
1.0
0.4
0.6 0.8 1.0 1.2 1.4
VSD – Source-to-Drain Voltage (V)
1.6
0.00
0
2468
VGS – Gate-to-Source Voltage (V)
10
Threshold Voltage
1.0
Single Pulse Power
120
0.5
ID = 250 µA
0.0
100
80
60
–0.5
40
20
–1.0
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.001
0.010
0.100
Time (sec)
2
1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
1.000
10.000
0.2
0.1
0.1 0.05
0.02
0.01
10–4
10–3
Single Pulse
10–2
10–1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1 10 30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70171
S-00873—Rev. F, 01-May-00
Datasheet pdf - http://www.DataSheet4U.net/




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