SI6467BDQ Datasheet PDF - Vishay Siliconix


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SI6467BDQ
Vishay Siliconix

Part Number SI6467BDQ
Description P-Channel 1.8-V (G-S) MOSFET
Page 5 Pages

SI6467BDQ datasheet pdf
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Si6467BDQ
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0125 @ VGS = -4.5 V
-12 0.0155 @ VGS = -2.5 V
0.020 @ VGS = -1.8 V
ID (A)
-8.0
- 7.0
- 6.0
S*
TSSOP-8
D 1D
S2
Si6467BDQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 8.0
-6.5
-1.35
1.5
1.0
-12
"8
-30
-55 to 150
-6.8
-5.4
-0.95
1.05
0.67
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72087
S-22382—Rev. A, 30-Dec-02
Symbol
RthJA
RthJF
Typical
65
100
43
Maximum
83
120
52
Unit
_C/W
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -450 mA
VDS = 0 V, VGS = "8 V
VDS = -9.6 V, VGS = 0 V
VDS = -9.6 V, VGS = 0 V, TJ = 70_C
VDS -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -8.0 A
VGS = -2.5 V, ID = -7.0 A
VGS = -1.8 V, ID = -5.8 A
VDS = -5 V, ID = -8.0 A
IS = -1.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = -6 V, VGS = -4.5 V, ID = -8.0 A
VDD = -6 V, RL = 6 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
IF = -1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
-0.45
-20
-0.75
"100
-1
-25
0.010
0.0125
0.016
44
-0.56
0.0125
0.0155
0.020
-1.1
V
nA
mA
A
W
W
S
V
46 70
5 nC
15.5
45 70
85 130
220 400 ns
155 235
140 210
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 2 V
24
1.5 V
18
30
24
18
12 12
6
0
0
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1V
1234
VDS - Drain-to-Source Voltage (V)
5
6
0
0.0
Transfer Characteristics
TC = 125_C
25_C
-55 _C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
2.0
Document Number: 72087
S-22382Rev. A, 30-Dec-02
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
6000
Capacitance
0.024
0.018
0.012
0.006
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
5000
4000
3000
2000
1000
Coss
Crss
Ciss
0.000
0
6 12 18 24
ID - Drain Current (A)
6
VDS = 6 V
5 ID = 8 A
Gate Charge
4
30
0
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
VGS = 4.5 V
ID = 8 A
1.2
3 1.0
2
0.8
1
0
0 12 24 36 48 60
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10 TJ = 150_C
1 TJ = 25_C
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
ID = 8 A
0.02
0.01
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
0.00
0
1234567
VGS - Gate-to-Source Voltage (V)
8
Document Number: 72087
S-22382Rev. A, 30-Dec-02
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Si6467BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Junction-to-Ambient
50
0.3
0.2
0.1
0.0
-0.1
ID = 250 mA
40
30
20
10
-0.2
-50 -25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10- 2
100
Limited
by rDS(on)
10
Safe Operating Area, Junction-to-Case
10 ms
1 100 ms
1s
0.1
TC = 25_C
10 s
dc
Single Pulse
10- 1
1
Time (sec)
10
100
2
1
Duty Cycle = 0.5
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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Document Number: 72087
S-22382Rev. A, 30-Dec-02
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