SI6466ADQ Datasheet PDF - Vishay Siliconix


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SI6466ADQ
Vishay Siliconix

Part Number SI6466ADQ
Description N-Channel 2.5-V (G-S) MOSFET
Page 5 Pages

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N-Channel 2.5-V (G-S) MOSFET
Si6466ADQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.014 at VGS = 4.5 V
0.020 at VGS = 2.5 V
ID (A)
8.1
6.6
FEATURES
Halogen-free
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
RoHS
COMPLIANT
D
TSSOP-8
D1
S2
S3
G4
Top View
8D
7S
6S
5D
Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Source Pins 2, 3, 6 and 7
G must be tied common.
S*
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
8.1 6.8
6.6 5.4
Pulsed Drain Current (10 µs Pulse Width)
IDM 30
Continuous Source Current (Diode Conduction)a
IS 1.35 0.95
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.5 1.05
1.0 0.67
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
65
100
43
Maximum
83
120
52
Unit
°C/W
Document Number: 71182
S-80682-Rev. C, 31-Mar-08
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Si6466ADQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 70 °C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 8.1 A
VGS = 2.5 V, ID = 6.6 A
VDS = 10 V, ID = 8.1 A
IS = 1.35 A, VGS = 0 V
VDS = 10 V, VGS = 5 V, ID = 8.1 A
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, RG = 6 Ω
IF = 1.5 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.45
20
Typ.
0.011
0.017
30
0.65
Max.
± 100
1
10
0.014
0.020
1.1
Unit
V
nA
µA
A
Ω
S
V
18 27
3.2 nC
4
0.5 1.8 Ω
27 45
34 50
76 120 ns
30 50
35 70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 30
VGS = 5 thru 2.5 V
24
24
2V
18
18
12
6
1.5 V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
12
6
0
0.0
TC = 125 °C
25 °C
- 5 5 °C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
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Document Number: 71182
S-80682-Rev. C, 31-Mar-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04 3000
Si6466ADQ
Vishay Siliconix
0.03
0.02
0.01
VGS = 2.5 V
VGS = 4.5 V
0.00
0
6 12 18 24
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 8.1 A
4
30
3
2
1
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
30
10 TJ = 150 °C
2400
1800
Ciss
1200
Coss
600
Crss
0
0
4
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.8
VGS = 10 V
1.6 ID = 8.1 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
0.03
ID = 8.1 A
TJ = 25 °C
0.02
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71182
S-80682-Rev. C, 31-Mar-08
www.vishay.com
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Si6466ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 100
0.2 80
ID = 250 µA
0.0 60
- 0.2
- 0.4
40
20
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 100 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71182.
www.vishay.com
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Document Number: 71182
S-80682-Rev. C, 31-Mar-08
Datasheet pdf - http://www.DataSheet4U.net/




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