SI6423DQ Datasheet PDF - Vishay Siliconix


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SI6423DQ
Vishay Siliconix

Part Number SI6423DQ
Description P-Channel 12-V (D-S) MOSFET
Page 5 Pages

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Si6423DQ
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0085 @ VGS = - 4.5 V
- 12 0.0106 @ VGS = - 2.5 V
0.014 @ VGS = - 1.8 V
ID (A)
- 9.5
- 8.5
- 7.5
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
S*
TSSOP-8
D 1D
S2
S3
G4
8D
7S
6S
5D
Top View
Ordering Information: Si6423DQ
Si6423DQ-T1 (with Tape and Reel)
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 9.5
-8
- 1.35
1.5
1.0
- 12
"8
- 30
- 55 to 150
- 8.2
- 6.5
- 0.95
1.05
0.67
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
Symbol
RthJA
RthJF
Typical
60
100
35
Maximum
83
120
45
Unit
_C/W
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Si6423DQ
Vishay Siliconix
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 400 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 70_C
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 9.5 A
VGS = - 2.5 V, ID = - 8.5 A
VGS = - 1.8 V, ID = - 7.5 A
VDS = - 15 V, ID = - 9.5 A
IS = - 1.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 6 V, VGS = - 5 V, ID = - 9.5 A
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 1.3 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
- 20
- 0.8
"100
-1
- 10
0.0068
0.0085
0.0112
45
- 0.58
0.0085
0.0106
0.014
- 1.1
V
nA
mA
A
W
S
V
74 110
9.0 nC
19
3.6 W
50 75
75 110
270 400 ns
200 300
160 250
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 5 thru 2 V
24 1.5 V
30
24
18 18
Transfer Characteristics
12
6
0
0
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1234
VDS - Drain-to-Source Voltage (V)
5
12
TC = 125_C
6
25_C
- 55_C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VGS - Gate-to-Source Voltage (V)
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
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Si6423DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
8000
Capacitance
0.024
0.018
0.012
0.006
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.000
0
6 12 18 24
ID - Drain Current (A)
5
VDS = 6 V
ID = 9.5 A
4
Gate Charge
30
6400
4800
Ciss
3200
1600
Coss
Crss
0
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 9.5 A
1.4
3 1.2
2 1.0
1 0.8
0
0 15 30 45 60 75
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
TJ = 150_C
10
1
TJ = 25_C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
ID = 9.5 A
0.02
0.01
0.00
0
1234
VGS - Gate-to-Source Voltage (V)
5
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Si6423DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
60
Single Pulse Power, Junction-to-Ambient
0.4
ID = 400 mA
0.2
0.0
- 0.2
50
40
30
20
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10 - 2
10 - 1
1
Time (sec)
100
Limited
by rDS(on)
10
Safe Operating Area, Junction-to-Case
1 ms
10 ms
1 100 ms
1s
10 s
0.1
TC = 25_C
dc
Single Pulse
10
100
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
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10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
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