SI6421DQ Datasheet PDF - Vishay Siliconix


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SI6421DQ
Vishay Siliconix

Part Number SI6421DQ
Description P-Channel 12-V (D-S) MOSFET
Page 5 Pages

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Si6421DQ
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0105 @ VGS = - 4.5 V
- 12 0.0135 @ VGS = - 2.5 V
0.0175 @ VGS = - 1.8 V
ID (A)
- 9.5
- 8.5
- 7.3
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
S*
TSSOP-8
D 1D
S2
Si6421DQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 9.5
- 7.5
- 1.5
1.75
1.14
- 12
"8
- 30
- 55 to 150
- 7.5
-6
- 0.95
1.08
0.69
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72125
S-03296—Rev. A, 03-Mar-03
Symbol
RthJA
RthJF
Typical
55
95
38
Maximum
70
115
50
Unit
_C/W
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Si6421DQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 550 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 70_C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 9.5 A
VGS = - 2.5 V, ID = - 8.5 A
VGS = - 1.8 V, ID = - 7.5 A
VDS = - 15 V, ID = - 9.5 A
IS = - 1.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 10 V, VGS = - 5 V, ID = - 9.5 A
VDD = - 10 V, RL = 15 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
20
- 0.8
"100
-1
- 10
0.008
0.0105
0.0135
50
- 0.64
0.0105
0.0135
0.0175
- 1.1
V
nA
mA
A
W
S
V
60 90
8 nC
16
4.3 W
46 70
92 140
235 350 ns
165 250
140 210
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 5 thru 2 V
32
40
32
1.5 V
24 24
Transfer Characteristics
16
8
1.0 V
0
012345
VDS - Drain-to-Source Voltage (V)
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2
16
8
0
0.00
TC = 125_C
25_C
- 55_C
0.25 0.50 0.75 1.00 1.25 1.50
VGS - Gate-to-Source Voltage (V)
1.75
Document Number: 72125
S-03296—Rev. A, 03-Mar-03
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Si6421DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
6500
Capacitance
0.020
0.015
0.010
0.005
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
5200
3900
2600
1300
Ciss
Crss
Coss
0.000
0
6 12 18 24
ID - Drain Current (A)
6
VDS = 6 V
5 ID = 9.5 A
Gate Charge
30
4
3
2
1
0
0 14 28 42 56 70
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
TJ = 150_C
10
1
TJ = 25_C
0
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 9.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
ID = 9.5 A
0.02
0.01
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Document Number: 72125
S-03296—Rev. A, 03-Mar-03
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
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Si6421DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
Single Pulse Power, Junction-to-Ambient
0.3
0.2
0.1 ID = 550 mA
- 0.0
- 0.1
160
120
80
- 0.2
40
- 0.3
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10 - 3
10 - 2
10 - 1
Time (sec)
1
10
100
Limited
by rDS(on)
Safe Operating Area, Junction-to-Case
10
10 ms
1
100 ms
1s
10 s
0.1
TC = 25_C
dc
Single Pulse
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
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10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 72125
S-03296—Rev. A, 03-Mar-03
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