SI5944DU Datasheet PDF - Vishay Siliconix


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SI5944DU
Vishay Siliconix

Part Number SI5944DU
Description Dual N-Channel 40-V (D-S) MOSFET
Page 10 Pages

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Dual N-Channel 40-V (D-S) MOSFET
Si5944DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.112 at VGS = 10 V
0.171 at VGS = 4.5 V
PowerPAK ChipFET Dual
1
S1 2
D1
8 D1
7
6
G1
D2
D2
5
3
S2 4
G2
ID (A)
6a
4.9
Qg (Typ.)
2.2 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
Marking Code
CC XXX
Lot Traceability
and Date Code
Part # Code
APPLICATIONS
• DC-DC Power Supply
D1
G1 G2
RoHS
COMPLIANT
D2
Bottom View
Ordering Information: Si5944DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IS
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
40
± 20
6a
4.87
3.28b, c
2.63b, c
10
8.33
1.68b, c
5
1.25
10
6.4
2.0b, c
1.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52
15
62
°C/W
18
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73683
S-81449-Rev. B, 23-Jun-08
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Si5944DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.3 A
VGS = 4.5 V, ID = 2.6 A
Forward Transconductancea
gfs VDS = 20 V, ID = 3.3 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 20 V, VGS = 10 V, ID = 3.3 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 20 V, VGS = 4.5 V, ID = 3.3 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20 V, RL = 7.6 Ω
ID 2.63 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20 V, RL = 9.48 Ω
ID 2.41 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 3.0 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
40
1
10
Typ.
Max.
Unit
32.6
- 4.7
0.093
0.137
6.88
3
± 100
-1
- 10
0.112
0.165
V
mV/°C
V
nA
µA
A
Ω
S
210
33
17
4.4 6.6
2.2 3.3
1.2
0.8
2.7 4.1
46
30 45
10 15
69
12 18
80 120
69
8 15
pF
nC
Ω
ns
8.33
A
10
0.8 1.2
V
22 33 ns
18 27 nC
19
ns
3
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73683
S-81449-Rev. B, 23-Jun-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS = 10 V thru 5 V
8
5
4
Si5944DU
Vishay Siliconix
63
4
2
0
0
0.25
0.20
VGS = 4 V
VGS = 3 V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
VGS = 4.5 V
0.15
0.10
VGS = 10 V
0.05
0.00
0 2 4 6 8 10
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 3.3 A
8
6 VDS = 20 V
VDS = 32 V
4
2
0
01234
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73683
S-81449-Rev. B, 23-Jun-08
5
2
1
0
0
300
TC = 125 °C
TC = 25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
250
Ciss
200
150
100
50 Coss
0 Crss
05
10 15 20 25 30 35
VDS - Drain-to-Source Voltage (V)
Capacitance
40
1.7
VGS = 10 V, ID = 3.3 A
1.5 VGS = 4.5 V, ID = 2.8 A
1.3
1.1
0.9
0.7
0.5
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5944DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.30
0.25
ID = 3.3 A
TJ = 150 °C
1
TJ = 25 °C
0.20
0.15
0.10
0.05
TA = 125 °C
TA = 25 °C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
ID = 250 µA
2.6
2.4
2.2
2.0
1.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
1
0.1
TA = 25 °C
Single Pulse
0.01
0.00
13579
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
45
40
35
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1s
10 s
DC
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4
0.001
0.1
1
10 100
* VGS
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area
Document Number: 73683
S-81449-Rev. B, 23-Jun-08
Datasheet pdf - http://www.DataSheet4U.net/




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