SI5908DC Datasheet PDF - Vishay Siliconix


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SI5908DC
Vishay Siliconix

Part Number SI5908DC
Description Dual N-Channel 20-V (D-S) MOSFET
Page 6 Pages

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Si5908DC
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
0.040 @ VGS = 4.5 V
20 0.045 @ VGS = 2.5 V
0.052 @ VGS = 1.8 V
ID (A)
5.9
5.6
5.2
1206-8 ChipFETr
1
S1
D1
D1
G1
S2
D2 G2
D2
Bottom View
Marking Code
CC XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5908DC-T1—E3
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
8
5.9 4.4
4.2 3.1
20
1.8 0.9
2.1 1.1
1.1 0.6
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
60
110
40
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73074
S-41641—Rev. A, 06-Sep-04
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 4.4 A
VGS = 2.5 V, ID = 4.1 A
VGS = 1.8 V, ID = 1.9 A
VDS = 10 V, ID = 4.4 A
IS = 0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
N-Channel
VDD = 10 V, RL = 10
ID 1 A, VGEN = 4.5 V, Rg = 6
IF = 0.9 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width 300 ms, duty cycle 2%,
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Min Typ Max Unit
0.4 1.0 V
100
nA
1
mA
5
20 A
0.032
0.040
0.036
0.045
0.042
0.052
22 S
0.8 1.2 V
5 7.5
0.85
nC
1
1.9
20 30
36 55
30 45
ns
12 20
45 90
Output Characteristics
20
VGS = 5 thru 2 V
16
12 1.5 V
8
4
0
0
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2
1V
1234
VDS -- Drain-to-Source Voltage (V)
5
Transfer Characteristics
20
TC = --55_C
16
25_C
12
125_C
8
4
0
0.0
0.4 0.8 1.2 1.6
VGS -- Gate-to-Source Voltage (V)
2.0
Document Number: 73074
S-41641—Rev. A, 06-Sep-04
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Si5908DC
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
0.08
0.06
0.04
VGS = 1.8 V
VGS = 2.5 V
0.02
VGS = 4.5 V
0.00
0 4 8 12 16
ID -- Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 4.4 A
4
20
Capacitance
800
700
600
Ciss
500
400
300
200
100
0
0
Crss
4
Coss
8
12 16 20
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 4.4 A
1.4
3 1.2
2 1.0
1 0.8
0
012345
Qg -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
6
10
TJ = 150_C
TJ = 25_C
0.6
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
ID = 2 A
ID = 4.4 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD -- Source-to-Drain Voltage (V)
0.00
0
1234
VGS -- Gate-to-Source Voltage (V)
5
Document Number: 73074
S-41641—Rev. A, 06-Sep-04
www.vishay.com
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Si5908DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
0.1
ID = 250 mA
--0.0
--0.1
--0.2
--0.3
Single Pulse Power
50
40
30
20
10
--0.4
--50 --25
0 25 50 75 100 125 150
TJ -- Temperature (_C)
0
10--4 10--3
10--2 10--1
1
Time (sec)
10 100 600
Safe Operating Area
100
rDS(on) Limited
IDM Limited
10
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1 ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
0.01
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1 1
10 100
VDS -- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1
0.05
0.02
0.01
10--4
Single Pulse
10--3
10--2
10--1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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Document Number: 73074
S-41641—Rev. A, 06-Sep-04
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